Samsung M3 78T5663RZ3-CF7 2GB vs Corsair CMK32GX4M1A2400C16 32GB

总分

Samsung M3 78T5663RZ3-CF7 2GB

Samsung M3 78T5663RZ3-CF7 2GB

总分

Corsair CMK32GX4M1A2400C16 32GB

Corsair CMK32GX4M1A2400C16 32GB

差异规格评论

差异

Samsung M3 78T5663RZ3-CF7 2GB

需要考虑的原因
Samsung M3 78T5663RZ3-CF7 2GB

报告一个错误

更快的读取速度，GB/s

4 15.8

测试中的平均数值

Corsair CMK32GX4M1A2400C16 32GB

需要考虑的原因
Corsair CMK32GX4M1A2400C16 32GB

报告一个错误

低于PassMark测试中的延时，ns

23 65

左右 -183% 更低的延时
更快的写入速度，GB/s

7.9 2,784.6

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T5663RZ3-CF7 2GB

Corsair CMK32GX4M1A2400C16 32GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

65 23
读取速度，GB/s

4,806.8 15.8
写入速度，GB/s

2,784.6 7.9
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

932 2684

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Absolute Latency

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最新比较

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Corsair CMK8GX4M2B4200C19 4GB

Corsair CMK8GX4M2B4200C19 4GB

SK Hynix HYMP31GF72CMP4D5Y5 8GB

SK Hynix HYMP31GF72CMP4D5Y5 8GB

Corsair CMT16GX4M2C3466C16 8GB

Corsair CMT16GX4M2C3466C16 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Crucial Technology BLS4G4S240FSD.8FBD 4GB

Crucial Technology BLS4G4S240FSD.8FBD 4GB

Samsung M3 78T5663RZ3-CF7 2GB

Samsung M3 78T5663RZ3-CF7 2GB

Corsair CMK32GX4M1A2400C16 32GB

Corsair CMK32GX4M1A2400C16 32GB

EVGA 16G-D3-1600-MR 8GB

EVGA 16G-D3-1600-MR 8GB

Thermaltake Technology Co Ltd R009D408GX2-3600C18B 8GB

Thermaltake Technology Co Ltd R009D408GX2-3600C18B 8GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Samsung M378A1K43BB1-CTD 16GB

Samsung M378A1K43BB1-CTD 16GB

G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

A-DATA Technology AO1P32NCSV1-BEWS 16GB

A-DATA Technology AO1P32NCSV1-BEWS 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Micron Technology 16ATF2G64AZ-2G3B1 16GB

Micron Technology 16ATF2G64AZ-2G3B1 16GB

Peak Electronics 256X64M-67E 2GB

Peak Electronics 256X64M-67E 2GB

SK Hynix HMA41GU6AFR8N-TF 8GB

SK Hynix HMA41GU6AFR8N-TF 8GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Gloway International (HK) STK4U2400D17082C 8GB

Gloway International (HK) STK4U2400D17082C 8GB

G Skill Intl F3-1333C9-4GIS 4GB

G Skill Intl F3-1333C9-4GIS 4GB

Ramsta Ramsta-2400Mhz-8G 8GB

Ramsta Ramsta-2400Mhz-8G 8GB

Kingston 9965525-018.A00LF 4GB

Kingston 9965525-018.A00LF 4GB

Samsung M471A2K43EB1-CTD 16GB

Samsung M471A2K43EB1-CTD 16GB

A-DATA Technology AM1U16BC4P2-B19H 4GB

A-DATA Technology AM1U16BC4P2-B19H 4GB

Crucial Technology CT51264BF160BJ.C8F 4GB

Crucial Technology CT51264BF160BJ.C8F 4GB

Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

Crucial Technology BLS8G4D30BESBK.8FD 8GB

Crucial Technology BLS8G4D30BESBK.8FD 8GB