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Samsung M3 78T5663RZ3-CF7 2GB
Kingston 9905711-017.A00G 4GB

Samsung M3 78T5663RZ3-CF7 2GB vs Kingston 9905711-017.A00G 4GB

总分
star star star star star
Samsung M3 78T5663RZ3-CF7 2GB

Samsung M3 78T5663RZ3-CF7 2GB

总分
star star star star star
Kingston 9905711-017.A00G 4GB

Kingston 9905711-017.A00G 4GB

差异 规格 评论

差异

Samsung M3 78T5663RZ3-CF7 2GB 需要考虑的原因
Samsung M3 78T5663RZ3-CF7 2GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 14.1
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,784.6 left arrow 11.0
    测试中的平均数值
Kingston 9905711-017.A00G 4GB 需要考虑的原因
Kingston 9905711-017.A00G 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    43 left arrow 65
    左右 -51% 更低的延时
  • 更高的内存带宽，mbps
    21300 left arrow 6400
    左右 3.33 更高的带宽

规格

完整的技术规格清单
Samsung M3 78T5663RZ3-CF7 2GB
Kingston 9905711-017.A00G 4GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    65 left arrow 43
  • 读取速度，GB/s
    4,806.8 left arrow 14.1
  • 写入速度，GB/s
    2,784.6 left arrow 11.0
  • 内存带宽，mbps
    6400 left arrow 21300
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    932 left arrow 2260

Samsung M3 78T5663RZ3-CF7 2GB RAM的比较

Samsung M3 78T5663FB3-CF7 2GB
AMD R332G1339U1S 2GB

Kingston 9905711-017.A00G 4GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
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内存RAM
Corsair CMD16GX3M4A2666C11 4GB
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内存RAM
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ASint Technology SSA302G08-EGN1C 4GB
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内存RAM
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Samsung M378A1K43EB2-CWE 8GB
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Kingston 9905598-044.A00G 16GB
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内存RAM
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内存RAM
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内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
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内存RAM
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内存RAM
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G Skill Intl F4-2133C15-4GFX 4GB
内存RAM
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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
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