Samsung M3 78T5663RZ3-CF7 2GB vs Micron Technology 18ASF1G72PDZ-2G1B1 8GB

总分

Samsung M3 78T5663RZ3-CF7 2GB

Samsung M3 78T5663RZ3-CF7 2GB

总分

Micron Technology 18ASF1G72PDZ-2G1B1 8GB

Micron Technology 18ASF1G72PDZ-2G1B1 8GB

差异规格评论

差异

Samsung M3 78T5663RZ3-CF7 2GB

需要考虑的原因
Samsung M3 78T5663RZ3-CF7 2GB

报告一个错误

Micron Technology 18ASF1G72PDZ-2G1B1 8GB

需要考虑的原因
Micron Technology 18ASF1G72PDZ-2G1B1 8GB

报告一个错误

低于PassMark测试中的延时，ns

54 65

左右 -20% 更低的延时
更快的读取速度，GB/s

9.3 4

测试中的平均数值
更快的写入速度，GB/s

7.3 2,784.6

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T5663RZ3-CF7 2GB

Micron Technology 18ASF1G72PDZ-2G1B1 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

65 54
读取速度，GB/s

4,806.8 9.3
写入速度，GB/s

2,784.6 7.3
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

932 1904

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston KVR533D2N4 512MB

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Crucial Technology CT16G4DFD8213.C16FBD 16GB

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Unifosa Corporation HU564404EP0200 4GB

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Hoodisk Electronics Co Ltd GKE800SO51216-2400 8GB

Hoodisk Electronics Co Ltd GKE800SO51216-2400 8GB

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Crucial Technology CT8G4DFS824A.M8FR 8GB

Crucial Technology CT8G4DFS824A.M8FR 8GB