Samsung M3 78T5663RZ3-CF7 2GB vs Micron Technology 8ATF51264AZ-2G1A1 4GB

总分

Samsung M3 78T5663RZ3-CF7 2GB

Samsung M3 78T5663RZ3-CF7 2GB

总分

Micron Technology 8ATF51264AZ-2G1A1 4GB

Micron Technology 8ATF51264AZ-2G1A1 4GB

差异规格评论

差异

Samsung M3 78T5663RZ3-CF7 2GB

需要考虑的原因
Samsung M3 78T5663RZ3-CF7 2GB

报告一个错误

更快的读取速度，GB/s

4 12.2

测试中的平均数值

Micron Technology 8ATF51264AZ-2G1A1 4GB

需要考虑的原因
Micron Technology 8ATF51264AZ-2G1A1 4GB

报告一个错误

低于PassMark测试中的延时，ns

43 65

左右 -51% 更低的延时
更快的写入速度，GB/s

9.7 2,784.6

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T5663RZ3-CF7 2GB

Micron Technology 8ATF51264AZ-2G1A1 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

65 43
读取速度，GB/s

4,806.8 12.2
写入速度，GB/s

2,784.6 9.7
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

932 2501

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung M3 78T5663RZ3-CF7 2GB

Samsung M3 78T5663RZ3-CF7 2GB

Micron Technology 8ATF51264AZ-2G1A1 4GB

Micron Technology 8ATF51264AZ-2G1A1 4GB

Kingston 9965525-140.A00LF 8GB

Kingston 9965525-140.A00LF 8GB

Corsair CMK16GX4M4A2400C16 4GB

Corsair CMK16GX4M4A2400C16 4GB

Samsung M4 70T5663QZ3-CE6 2GB

Samsung M4 70T5663QZ3-CE6 2GB

SK Hynix HMAA2GS6AJR8N-XN 16GB

SK Hynix HMAA2GS6AJR8N-XN 16GB

Kingston 9965516-049.A00LF 8GB

Kingston 9965516-049.A00LF 8GB

Corsair CM4X16GC3600C18K2D 16GB

Corsair CM4X16GC3600C18K2D 16GB

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

G Skill Intl F4-4000C17-16GTZRB 16GB

G Skill Intl F4-4000C17-16GTZRB 16GB

Kreton Corporation 51624xxxx68x35xxxx 2GB

Kreton Corporation 51624xxxx68x35xxxx 2GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR4N-UH 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR4N

Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A

Micron Technology 36ASF2G72LZ-2G1A1 16GB

Micron Technology 36ASF2G72LZ-2G1A1 16GB

Kingston 99U5458-008.A00LF 4GB

Kingston 99U5458-008.A00LF 4GB

Micron Technology 8ATF1G64HZ-2G6E1 8GB

Micron Technology 8ATF1G64HZ-2G6E1 8GB

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

Corsair CMN32GX4M2Z4600C18 16GB

Corsair CMN32GX4M2Z4600C18 16GB

Kingston 99U5458-008.A00LF 4GB

Kingston 99U5458-008.A00LF 4GB

Samsung M471A2K43EB1-CTD 16GB

Samsung M471A2K43EB1-CTD 16GB

Kingston 9905584-016.A00LF 4GB

Kingston 9905584-016.A00LF 4GB

G Skill Intl F4-3000C15-8GRBB 8GB

G Skill Intl F4-3000C15-8GRBB 8GB

Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

Crucial Technology CT16G4SFD824A.C16FE 16GB

Crucial Technology CT16G4SFD824A.C16FE 16GB

Kingston KHX2400C11D3/4GX 4GB

Kingston KHX2400C11D3/4GX 4GB

G Skill Intl F4-3600C16-8GTZ 8GB

G Skill Intl F4-3600C16-8GTZ 8GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

Crucial Technology BLS4G4D240FSC.8FBR2 4GB

Crucial Technology BLS4G4D240FSC.8FBR2 4GB