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Samsung M3 78T5663RZ3-CF7 2GB
Samsung M378A5244CB0-CVF 4GB

Samsung M3 78T5663RZ3-CF7 2GB vs Samsung M378A5244CB0-CVF 4GB

总分
star star star star star
Samsung M3 78T5663RZ3-CF7 2GB

Samsung M3 78T5663RZ3-CF7 2GB

总分
star star star star star
Samsung M378A5244CB0-CVF 4GB

Samsung M378A5244CB0-CVF 4GB

差异 规格 评论

差异

Samsung M3 78T5663RZ3-CF7 2GB 需要考虑的原因
Samsung M3 78T5663RZ3-CF7 2GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 16
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,784.6 left arrow 12.3
    测试中的平均数值
Samsung M378A5244CB0-CVF 4GB 需要考虑的原因
Samsung M378A5244CB0-CVF 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    30 left arrow 65
    左右 -117% 更低的延时
  • 更高的内存带宽，mbps
    23400 left arrow 6400
    左右 3.66 更高的带宽

规格

完整的技术规格清单
Samsung M3 78T5663RZ3-CF7 2GB
Samsung M378A5244CB0-CVF 4GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    65 left arrow 30
  • 读取速度，GB/s
    4,806.8 left arrow 16.0
  • 写入速度，GB/s
    2,784.6 left arrow 12.3
  • 内存带宽，mbps
    6400 left arrow 23400
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-23400, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 19-19-19, 20-20-20, 21-21-21, 22-22-22 / 2933 MHz
  • 排名PassMark (越多越好)
    932 left arrow 2709

Samsung M3 78T5663RZ3-CF7 2GB RAM的比较

Samsung M3 78T5663FB3-CF7 2GB
AMD R332G1339U1S 2GB

Samsung M378A5244CB0-CVF 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Ramaxel Technology RMR5040ED58E9W1600 4GB
Ramaxel Technology RMR5040ED58E9W1600 4GB
Crucial Technology CT8G4SFS824A.C8FJ 8GB
Crucial Technology CT8G4SFS824A.C8FJ 8GB
内存RAM
Samsung M3 78T5663RZ3-CF7 2GB
Samsung M3 78T5663RZ3-CF7 2GB
Samsung M378A5244CB0-CVF 4GB
Samsung M378A5244CB0-CVF 4GB
内存RAM
Corsair CMZ16GX3M2A2400C10 8GB
Corsair CMZ16GX3M2A2400C10 8GB
Kingston KHX3200C16D4/32GX 32GB
Kingston KHX3200C16D4/32GX 32GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Corsair CM4B8G2J2666A15D 8GB
Corsair CM4B8G2J2666A15D 8GB
内存RAM
Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
Corsair CMK16GX4M2Z3600C18 8GB
Corsair CMK16GX4M2Z3600C18 8GB
内存RAM
Unifosa Corporation HU564404EP0200 4GB
Unifosa Corporation HU564404EP0200 4GB
Kingston HP24D4U7S8MBP-4 4GB
Kingston HP24D4U7S8MBP-4 4GB
内存RAM
Kingston KVR16N11/8-SP 8GB
Kingston KVR16N11/8-SP 8GB
Crucial Technology CT16G4SFD8213.M16FA 16GB
Crucial Technology CT16G4SFD8213.M16FA 16GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Corsair CMU32GX4M2A2400C14 16GB
Corsair CMU32GX4M2A2400C14 16GB
内存RAM
Samsung M395T2863QZ4-CF76 1GB
Samsung M395T2863QZ4-CF76 1GB
Micron Technology MTA8ATF1G64HZ-2G3B1 16GB
Micron Technology MTA8ATF1G64HZ-2G3B1 16GB
内存RAM
Samsung M393B5170FH0-CH9 4GB
Samsung M393B5170FH0-CH9 4GB
Avexir Technologies Corporation DDR4-2800 CL15 4GB 4GB
Avexir Technologies Corporation DDR4-2800 CL15 4GB 4GB
内存RAM
Corsair CMZ16GX3M2A2400C10 8GB
Corsair CMZ16GX3M2A2400C10 8GB
Crucial Technology CT8G4SFS8213.M8FA 8GB
Crucial Technology CT8G4SFS8213.M8FA 8GB
内存RAM
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Corsair CMK64GX4M82800C14 8GB
Corsair CMK64GX4M82800C14 8GB
内存RAM
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Corsair CMG32GX4M2D3600C18 16GB
Corsair CMG32GX4M2D3600C18 16GB
内存RAM
Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
Essencore Limited IM44GU48N28-GGGHM 4GB
Essencore Limited IM44GU48N28-GGGHM 4GB
内存RAM