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Samsung M3 93T5750CZA-CE6 2GB
A-DATA Technology AO1P24HC4R1-BSIS 4GB
比较
Samsung M3 93T5750CZA-CE6 2GB vs A-DATA Technology AO1P24HC4R1-BSIS 4GB
总分
Samsung M3 93T5750CZA-CE6 2GB
总分
A-DATA Technology AO1P24HC4R1-BSIS 4GB
差异
规格
评论
差异
需要考虑的原因
Samsung M3 93T5750CZA-CE6 2GB
报告一个错误
更快的读取速度,GB/s
3
14.9
测试中的平均数值
需要考虑的原因
A-DATA Technology AO1P24HC4R1-BSIS 4GB
报告一个错误
低于PassMark测试中的延时,ns
36
77
左右 -114% 更低的延时
更快的写入速度,GB/s
8.2
2,622.0
测试中的平均数值
更高的内存带宽,mbps
19200
5300
左右 3.62 更高的带宽
规格
完整的技术规格清单
Samsung M3 93T5750CZA-CE6 2GB
A-DATA Technology AO1P24HC4R1-BSIS 4GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
77
36
读取速度,GB/s
3,405.2
14.9
写入速度,GB/s
2,622.0
8.2
内存带宽,mbps
5300
19200
Other
描述
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
5-5-5-15 / 667 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
763
2281
Samsung M3 93T5750CZA-CE6 2GB RAM的比较
takeMS International AG TMS2GB264D082805EQ 2GB
Southland Microsystems 40002105-01 2GB
A-DATA Technology AO1P24HC4R1-BSIS 4GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M378A1G43DB0-CPB 8GB
Corsair CM4S16GL3200K18K2 16GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Crucial Technology CT16G4DFD8266.C16FP 16GB
AMD R538G1601U2S-UO 8GB
Corsair CMK32GX4M2A2666C16 16GB
Samsung M3 78T2863EHS-CF7 1GB
G Skill Intl F4-4000C19-8GTZSW 8GB
Samsung M393B1G70BH0-YK0 8GB
G Skill Intl F4-4000C18-8GTRS 8GB
TwinMOS 8DHE3MN8-HATP 2GB
Kingston 9905624-025.A00G 8GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Kingston 99U5624-003.A00G 8GB
Kingston 9905403-134.A00LF 2GB
Essencore Limited KD44GU480-26N160T 4GB
Samsung M395T2863QZ4-CF76 1GB
Golden Empire CL16-16-16 D4-2400 8GB
Samsung M471B5273DH0-CH9 4GB
Crucial Technology BLS16G4D26BFSB.16FBR 16GB
AMD AE34G1601U1 4GB
Avant Technology W641GU42J9266NB 8GB
Kingston ACR512X64D3S13C9G 4GB
Micron Technology 8ATF1G64HZ-2G1A1 8GB
Corsair CMX4GX3M2A1600C9 2GB
Apacer Technology 78.D1GMM.AU10B 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-3200C14-8GTRS 8GB
报告一个错误
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Bug description
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