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Samsung M3 93T5750CZA-CE6 2GB
Crucial Technology BL16G32C16U4B.M16FE1 16GB

Samsung M3 93T5750CZA-CE6 2GB vs Crucial Technology BL16G32C16U4B.M16FE1 16GB

总分
star star star star star
Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

总分
star star star star star
Crucial Technology BL16G32C16U4B.M16FE1 16GB

Crucial Technology BL16G32C16U4B.M16FE1 16GB

差异 规格 评论

差异

Samsung M3 93T5750CZA-CE6 2GB 需要考虑的原因
Samsung M3 93T5750CZA-CE6 2GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 19.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,622.0 left arrow 15.5
    测试中的平均数值
Crucial Technology BL16G32C16U4B.M16FE1 16GB 需要考虑的原因
Crucial Technology BL16G32C16U4B.M16FE1 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 77
    左右 -175% 更低的延时
  • 更高的内存带宽，mbps
    21300 left arrow 5300
    左右 4.02 更高的带宽

规格

完整的技术规格清单
Samsung M3 93T5750CZA-CE6 2GB
Crucial Technology BL16G32C16U4B.M16FE1 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    77 left arrow 28
  • 读取速度，GB/s
    3,405.2 left arrow 19.2
  • 写入速度，GB/s
    2,622.0 left arrow 15.5
  • 内存带宽，mbps
    5300 left arrow 21300
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    763 left arrow 3698

Samsung M3 93T5750CZA-CE6 2GB RAM的比较

takeMS International AG TMS2GB264D082805EQ 2GB
Southland Microsystems 40002105-01 2GB

Crucial Technology BL16G32C16U4B.M16FE1 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
Crucial Technology BL16G32C16U4B.M16FE1 16GB
Crucial Technology BL16G32C16U4B.M16FE1 16GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
Corsair CMD128GX4M8B2800C14 16GB
Corsair CMD128GX4M8B2800C14 16GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Micron Technology 18ADF2G72AZ-2G3A1 16GB
Micron Technology 18ADF2G72AZ-2G3A1 16GB
内存RAM
SK Hynix HMT325S6CFR8C-PB 2GB
SK Hynix HMT325S6CFR8C-PB 2GB
Micron Technology 9ASF51272PZ-2G3B1 4GB
Micron Technology 9ASF51272PZ-2G3B1 4GB
内存RAM
Kingston 2GB-DDR2 800Mhz 2GB
Kingston 2GB-DDR2 800Mhz 2GB
Kingston 9965600-012.A02G 16GB
Kingston 9965600-012.A02G 16GB
内存RAM
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Kingston KYXC0V-MIB 16GB
Kingston KYXC0V-MIB 16GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology BLS8G4D240FSB.M16FBD 8GB
Crucial Technology BLS8G4D240FSB.M16FBD 8GB
内存RAM
Corsair CM3X2G1600C9 2GB
Corsair CM3X2G1600C9 2GB
Zotac Technology Ltd OD48G32S816-ZHC 8GB
Zotac Technology Ltd OD48G32S816-ZHC 8GB
内存RAM
Corsair CMK32GX5M2A4800C40 16GB
Corsair CMK32GX5M2A4800C40 16GB
Corsair CMK32GX5M2B5600C36 16GB
Corsair CMK32GX5M2B5600C36 16GB
内存RAM
Kingston KVR800D2N6/2G 2GB
Kingston KVR800D2N6/2G 2GB
Maxsun MSD48G32Q3 8GB
Maxsun MSD48G32Q3 8GB
内存RAM
Elpida EBJ17RG4EFWA-DJ-F 16GB
Elpida EBJ17RG4EFWA-DJ-F 16GB
Asgard VMA45UG-MEC1U2AW1 8GB
Asgard VMA45UG-MEC1U2AW1 8GB
内存RAM
Kingmax Semiconductor FLFE85F-C8KM9 2GB
Kingmax Semiconductor FLFE85F-C8KM9 2GB
Crucial Technology BLS16G4D240FSC.16FD 16GB
Crucial Technology BLS16G4D240FSC.16FD 16GB
内存RAM
G Skill Intl F4-3600C16-8GTZKK 8GB
G Skill Intl F4-3600C16-8GTZKK 8GB
Kingston HP26D4S9S8ME-8 8GB
Kingston HP26D4S9S8ME-8 8GB
内存RAM
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Kingston CAC24D4S7D8MB-16 16GB
Kingston CAC24D4S7D8MB-16 16GB
内存RAM