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Samsung M3 93T5750CZA-CE6 2GB
Crucial Technology BL16G36C16U4RL.M8FB1 16GB
比较
Samsung M3 93T5750CZA-CE6 2GB vs Crucial Technology BL16G36C16U4RL.M8FB1 16GB
总分
Samsung M3 93T5750CZA-CE6 2GB
总分
Crucial Technology BL16G36C16U4RL.M8FB1 16GB
差异
规格
评论
差异
需要考虑的原因
Samsung M3 93T5750CZA-CE6 2GB
报告一个错误
更快的读取速度,GB/s
3
20.9
测试中的平均数值
更快的写入速度,GB/s
2,622.0
18.3
测试中的平均数值
需要考虑的原因
Crucial Technology BL16G36C16U4RL.M8FB1 16GB
报告一个错误
低于PassMark测试中的延时,ns
26
77
左右 -196% 更低的延时
更高的内存带宽,mbps
21300
5300
左右 4.02 更高的带宽
规格
完整的技术规格清单
Samsung M3 93T5750CZA-CE6 2GB
Crucial Technology BL16G36C16U4RL.M8FB1 16GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
77
26
读取速度,GB/s
3,405.2
20.9
写入速度,GB/s
2,622.0
18.3
内存带宽,mbps
5300
21300
Other
描述
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度
5-5-5-15 / 667 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
763
4217
Samsung M3 93T5750CZA-CE6 2GB RAM的比较
takeMS International AG TMS2GB264D082805EQ 2GB
Southland Microsystems 40002105-01 2GB
Crucial Technology BL16G36C16U4RL.M8FB1 16GB RAM的比较
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M3 93T5750CZA-CE6 2GB
Crucial Technology BL16G36C16U4RL.M8FB1 16GB
Kingston 9905471-001.A01LF 2GB
Micron Technology 72ASS8G72LZ-2G6D2 64GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
G Skill Intl F4-3000C15-8GTZB 8GB
Kingston 9905471-002.A00LF 2GB
Crucial Technology CB16GS2666.C8ET 16GB
Kingston KHX2800C14D4/8GX 8GB
Kingston KHX4133C19D4/8GX 8GB
Corsair CMK32GX5M2B5200C40 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Corsair CMV16GX4M1A2400C16 16GB
Corsair CMV8GX4M1A2400C16 8GB
Samsung M393B2G70BH0-CH9 16GB
V-Color Technology Inc. TA48G30S815GK 8GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Ramaxel Technology RMSA3310MJ86H9F-3200 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-2400C17-8GVR 8GB
A-DATA Technology DDR4 2400 16GB
Micron Technology 4ATF51264AZ-3G2E1 4GB
Kingston KHX2400C11D3/4GX 4GB
Crucial Technology CT16G4SFD8213.C16FDD 16GB
AMD R5S38G1601U2S 8GB
Wilk Elektronik S.A. GR3200D464L22/16G 16GB
Samsung M393B2G70BH0-CK0 16GB
Corsair CMT16GX4M2C3466C16 8GB
报告一个错误
×
Bug description
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