Samsung M3 93T5750CZA-CE6 2GB vs Eudar Technology Inc. 8GXMP3000CL16 8GB

总分

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

总分

Eudar Technology Inc. 8GXMP3000CL16 8GB

Eudar Technology Inc. 8GXMP3000CL16 8GB

差异规格评论

差异

Samsung M3 93T5750CZA-CE6 2GB

需要考虑的原因
Samsung M3 93T5750CZA-CE6 2GB

报告一个错误

更快的读取速度，GB/s

3 14.7

测试中的平均数值

Eudar Technology Inc. 8GXMP3000CL16 8GB

需要考虑的原因
Eudar Technology Inc. 8GXMP3000CL16 8GB

报告一个错误

低于PassMark测试中的延时，ns

73 77

左右 -5% 更低的延时
更快的写入速度，GB/s

8.5 2,622.0

测试中的平均数值
更高的内存带宽，mbps

19200 5300

左右 3.62 更高的带宽

规格

完整的技术规格清单

Samsung M3 93T5750CZA-CE6 2GB

Eudar Technology Inc. 8GXMP3000CL16 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

77 73
读取速度，GB/s

3,405.2 14.7
写入速度，GB/s

2,622.0 8.5
内存带宽，mbps

5300 19200

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 667 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

763 1712

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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Crucial Technology BL8G36C16U4RL.M8FE1 8GB

Crucial Technology BL8G36C16U4RL.M8FE1 8GB