Samsung M3 93T5750CZA-CE6 2GB vs G Skill Intl F4-2133C15-16GFX 16GB

总分

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

总分

G Skill Intl F4-2133C15-16GFX 16GB

G Skill Intl F4-2133C15-16GFX 16GB

差异规格评论

差异

Samsung M3 93T5750CZA-CE6 2GB

需要考虑的原因
Samsung M3 93T5750CZA-CE6 2GB

报告一个错误

更快的读取速度，GB/s

3 17.2

测试中的平均数值
更快的写入速度，GB/s

2,622.0 13.1

测试中的平均数值

G Skill Intl F4-2133C15-16GFX 16GB

需要考虑的原因
G Skill Intl F4-2133C15-16GFX 16GB

报告一个错误

低于PassMark测试中的延时，ns

23 77

左右 -235% 更低的延时
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

Samsung M3 93T5750CZA-CE6 2GB

G Skill Intl F4-2133C15-16GFX 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

77 23
读取速度，GB/s

3,405.2 17.2
写入速度，GB/s

2,622.0 13.1
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

763 3116

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

G Skill Intl F4-2133C15-16GFX 16GB

G Skill Intl F4-2133C15-16GFX 16GB

SK Hynix HMT31GR7BFR4C-H9 8GB

SK Hynix HMT31GR7BFR4C-H9 8GB

Crucial Technology CT8G4DFS824A.C8FBR1 8GB

Crucial Technology CT8G4DFS824A.C8FBR1 8GB

Kingston 9905403-515.A00LF 8GB

Kingston 9905403-515.A00LF 8GB

Micron Technology 9ASF51272AZ-2G3B1 4GB

Micron Technology 9ASF51272AZ-2G3B1 4GB

Kingston 9905469-143.A00LF 4GB

Kingston 9905469-143.A00LF 4GB

Crucial Technology BL16G36C16U4BL.M8FB1 16GB

Crucial Technology BL16G36C16U4BL.M8FB1 16GB

Samsung M386B4G70DM0-CMA4 32GB

Samsung M386B4G70DM0-CMA4 32GB

Kingston KF3200C16D4/8GX 8GB

Kingston KF3200C16D4/8GX 8GB

Kingston 99U5595-005.A00LF 2GB

Kingston 99U5595-005.A00LF 2GB

Kingston HP32D4U2S8MR-8 8GB

Kingston HP32D4U2S8MR-8 8GB

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A

Kingston 9905625-142.A00G 16GB

Kingston 9905625-142.A00G 16GB

Samsung M393A1G40DB0-CPB 8GB

Samsung M393A1G40DB0-CPB 8GB

Kingston 9965596-035.B00G 4GB

Kingston 9965596-035.B00G 4GB

Kingston 9905471-002.A00LF 2GB

Kingston 9905471-002.A00LF 2GB

Corsair CMK16GX4M2D2666C16 8GB

Corsair CMK16GX4M2D2666C16 8GB

AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

G Skill Intl F4-4000C18-16GTZN 16GB

G Skill Intl F4-4000C18-16GTZN 16GB

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

Corsair CMR64GX4M8C3200C16 8GB

Corsair CMR64GX4M8C3200C16 8GB

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

HT Micron HTH5AN8G8NCJR-VKD 8GB

HT Micron HTH5AN8G8NCJR-VKD 8GB

A-DATA Technology DQKD1A08 1GB

A-DATA Technology DQKD1A08 1GB

G Skill Intl F4-4000C16-8GTZR 8GB

G Skill Intl F4-4000C16-8GTZR 8GB

Kingston MSI16D3LS1MNG/8G 8GB

Kingston MSI16D3LS1MNG/8G 8GB

Patriot Memory (PDP Systems) PSD48G21332 8GB

Patriot Memory (PDP Systems) PSD48G21332 8GB