Samsung M3 93T5750CZA-CE6 2GB vs G Skill Intl F4-3200C16-16GTZRX 16GB

总分

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

总分

G Skill Intl F4-3200C16-16GTZRX 16GB

G Skill Intl F4-3200C16-16GTZRX 16GB

差异规格评论

差异

Samsung M3 93T5750CZA-CE6 2GB

需要考虑的原因
Samsung M3 93T5750CZA-CE6 2GB

报告一个错误

更快的读取速度，GB/s

3 18.4

测试中的平均数值
更快的写入速度，GB/s

2,622.0 15.1

测试中的平均数值

G Skill Intl F4-3200C16-16GTZRX 16GB

需要考虑的原因
G Skill Intl F4-3200C16-16GTZRX 16GB

报告一个错误

低于PassMark测试中的延时，ns

27 77

左右 -185% 更低的延时
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

Samsung M3 93T5750CZA-CE6 2GB

G Skill Intl F4-3200C16-16GTZRX 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

77 27
读取速度，GB/s

3,405.2 18.4
写入速度，GB/s

2,622.0 15.1
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

763 3711

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Micron Technology 8ATF1G64HZ-3G2J1 8GB

Micron Technology 8ATF1G64HZ-3G2J1 8GB

Samsung M471A1G44AB0-CWE 8GB

Samsung M471A1G44AB0-CWE 8GB

G Skill Intl F3-12800CL7-4GBXM 4GB

G Skill Intl F3-12800CL7-4GBXM 4GB

Samsung M471A1K43CB1-CTD 8GB

Samsung M471A1K43CB1-CTD 8GB

G Skill Intl F5-5600J4040C16G 16GB

G Skill Intl F5-5600J4040C16G 16GB

Samsung M393A2G40EB2-CTD 16GB

Samsung M393A2G40EB2-CTD 16GB

Kingston 99U5474-013.A00LF 2GB

Kingston 99U5474-013.A00LF 2GB

Essencore Limited KD48GU88C-26N1600 8GB

Essencore Limited KD48GU88C-26N1600 8GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Samsung M378A1K43EB2-CVF 8GB

Samsung M378A1K43EB2-CVF 8GB

Kingston 9905403-156.A00LF 2GB

Kingston 9905403-156.A00LF 2GB

SK Hynix HMA451U7AFR8N-TF 4GB

SK Hynix HMA451U7AFR8N-TF 4GB

Kingston 99U5474-028.A00LF 4GB

Kingston 99U5474-028.A00LF 4GB

Hynix Semiconductor (Hyundai Electronics) HMA82GU6MFR8N-TF 16GB

Hynix Semiconductor (Hyundai Electronics) HMA82GU6MFR8N

Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

G Skill Intl F4-3200C16-16GTZSK 16GB

G Skill Intl F4-3200C16-16GTZSK 16GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Crucial Technology CT8G4DFS824A.C8FJ 8GB

Crucial Technology CT8G4DFS824A.C8FJ 8GB

Kingston KTC1G-UDIMM 1GB

Kingston KTC1G-UDIMM 1GB

SanMax Technologies Inc. SMD4-U16G48HD1-29Y 16GB

SanMax Technologies Inc. SMD4-U16G48HD1-29Y 16GB

Samsung M4 70T2953EZ3-CE6 1GB

Samsung M4 70T2953EZ3-CE6 1GB

G Skill Intl F4-2666C15-4GVR 4GB

G Skill Intl F4-2666C15-4GVR 4GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

Corsair CMK8GX4M1A2666C16 8GB

Corsair CMK8GX4M1A2666C16 8GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

G Skill Intl F4-3200C16-8GTZB 8GB

G Skill Intl F4-3200C16-8GTZB 8GB

Kingston KVR16N11/8-SP 8GB

Kingston KVR16N11/8-SP 8GB

Avexir Technologies Corporation DDR4-3200 CL16 8GB 8GB

Avexir Technologies Corporation DDR4-3200 CL16 8GB 8GB