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Samsung M3 93T5750CZA-CE6 2GB
G Skill Intl F4-3200C16-32GTRG 32GB

Samsung M3 93T5750CZA-CE6 2GB vs G Skill Intl F4-3200C16-32GTRG 32GB

总分
star star star star star
Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

总分
star star star star star
G Skill Intl F4-3200C16-32GTRG 32GB

G Skill Intl F4-3200C16-32GTRG 32GB

差异 规格 评论

差异

Samsung M3 93T5750CZA-CE6 2GB 需要考虑的原因
Samsung M3 93T5750CZA-CE6 2GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 18.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,622.0 left arrow 14.7
    测试中的平均数值
G Skill Intl F4-3200C16-32GTRG 32GB 需要考虑的原因
G Skill Intl F4-3200C16-32GTRG 32GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    29 left arrow 77
    左右 -166% 更低的延时
  • 更高的内存带宽，mbps
    21300 left arrow 5300
    左右 4.02 更高的带宽

规格

完整的技术规格清单
Samsung M3 93T5750CZA-CE6 2GB
G Skill Intl F4-3200C16-32GTRG 32GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    77 left arrow 29
  • 读取速度，GB/s
    3,405.2 left arrow 18.6
  • 写入速度，GB/s
    2,622.0 left arrow 14.7
  • 内存带宽，mbps
    5300 left arrow 21300
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    763 left arrow 3765

Samsung M3 93T5750CZA-CE6 2GB RAM的比较

takeMS International AG TMS2GB264D082805EQ 2GB
Southland Microsystems 40002105-01 2GB

G Skill Intl F4-3200C16-32GTRG 32GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
G Skill Intl F4-3200C16-32GTRG 32GB
G Skill Intl F4-3200C16-32GTRG 32GB
内存RAM
Kingston 9905403-090.A01LF 4GB
Kingston 9905403-090.A01LF 4GB
Kingston KM0VW4-MID 8GB
Kingston KM0VW4-MID 8GB
内存RAM
Mushkin 996902 2GB
Mushkin 996902 2GB
Crucial Technology BLS8G4D240FSE.16FBD 8GB
Crucial Technology BLS8G4D240FSE.16FBD 8GB
内存RAM
Kingston 9905469-153.A00LF 4GB
Kingston 9905469-153.A00LF 4GB
Kingston XRGM6C-MIE 16GB
Kingston XRGM6C-MIE 16GB
内存RAM
G Skill Intl F3-14900CL9-4GBSR 4GB
G Skill Intl F3-14900CL9-4GBSR 4GB
Crucial Technology BLS16G4D32AEST.M16FE 16GB
Crucial Technology BLS16G4D32AEST.M16FE 16GB
内存RAM
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
G Skill Intl F4-2800C18-16GRS 16GB
G Skill Intl F4-2800C18-16GRS 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Kingston HP24D4U7S8MD-8 8GB
Kingston HP24D4U7S8MD-8 8GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
Samsung M393A2G40EB1-CRC 16GB
Samsung M393A2G40EB1-CRC 16GB
内存RAM
Samsung M378B5273CH0-CH9 4GB
Samsung M378B5273CH0-CH9 4GB
G Skill Intl F4-2800C16-8GRK 8GB
G Skill Intl F4-2800C16-8GRK 8GB
内存RAM
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Mushkin 99[2/7/4]197F 8GB
Mushkin 99[2/7/4]197F 8GB
内存RAM
Kingston 9905403-011.A03LF 2GB
Kingston 9905403-011.A03LF 2GB
Corsair CMWX16GC3200C16W2E 16GB
Corsair CMWX16GC3200C16W2E 16GB
内存RAM
Kingston 99U5403-465.A00LF 8GB
Kingston 99U5403-465.A00LF 8GB
G Skill Intl F4-3333C16-16GTZSK 16GB
G Skill Intl F4-3333C16-16GTZSK 16GB
内存RAM
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Corsair CMK32GX4M2Z3600C18 16GB
Corsair CMK32GX4M2Z3600C18 16GB
内存RAM
Samsung M393B1K70QB0-CK0 8GB
Samsung M393B1K70QB0-CK0 8GB
G Skill Intl F4-3200C15-16GVK 16GB
G Skill Intl F4-3200C15-16GVK 16GB
内存RAM