Samsung M3 93T5750CZA-CE6 2GB vs G Skill Intl F4-3600C14-8GTZRA 8GB

总分

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

总分

G Skill Intl F4-3600C14-8GTZRA 8GB

G Skill Intl F4-3600C14-8GTZRA 8GB

差异规格评论

差异

Samsung M3 93T5750CZA-CE6 2GB

需要考虑的原因
Samsung M3 93T5750CZA-CE6 2GB

报告一个错误

更快的读取速度，GB/s

3 20.3

测试中的平均数值
更快的写入速度，GB/s

2,622.0 16.6

测试中的平均数值

G Skill Intl F4-3600C14-8GTZRA 8GB

需要考虑的原因
G Skill Intl F4-3600C14-8GTZRA 8GB

报告一个错误

低于PassMark测试中的延时，ns

24 77

左右 -221% 更低的延时
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

Samsung M3 93T5750CZA-CE6 2GB

G Skill Intl F4-3600C14-8GTZRA 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

77 24
读取速度，GB/s

3,405.2 20.3
写入速度，GB/s

2,622.0 16.6
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

763 3987

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Samsung 1600 CL10 Series 8GB

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Avant Technology W641GU48J5213ND 8GB

Avant Technology W641GU48J5213ND 8GB

Essencore Limited KD48GU88C-26N1600 8GB

Essencore Limited KD48GU88C-26N1600 8GB

DSL Memory D4SS1G081SH24A-A 8GB

DSL Memory D4SS1G081SH24A-A 8GB

Samsung 1600 CL10 Series 8GB

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Micron Technology 18ADF2G72AZ-2G3B1 16GB

Micron Technology 18ADF2G72AZ-2G3B1 16GB

Kingston 9905471-002.A00LF 2GB

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JUHOR JHD2666U1916JG 16GB

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Patriot Memory (PDP Systems) PSD22G8002 2GB

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SK Hynix HMA82GS6CJR8N-XN 16GB

SK Hynix HMA82GS6CJR8N-XN 16GB