Samsung M3 93T5750CZA-CE6 2GB vs Heoriady M471A1K43BB1-CRC 16GB

总分

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

总分

Heoriady M471A1K43BB1-CRC 16GB

Heoriady M471A1K43BB1-CRC 16GB

差异规格评论

差异

Samsung M3 93T5750CZA-CE6 2GB

需要考虑的原因
Samsung M3 93T5750CZA-CE6 2GB

报告一个错误

更快的读取速度，GB/s

3 15.1

测试中的平均数值

Heoriady M471A1K43BB1-CRC 16GB

需要考虑的原因
Heoriady M471A1K43BB1-CRC 16GB

报告一个错误

低于PassMark测试中的延时，ns

37 77

左右 -108% 更低的延时
更快的写入速度，GB/s

9.6 2,622.0

测试中的平均数值
更高的内存带宽，mbps

21300 5300

左右 4.02 更高的带宽

规格

完整的技术规格清单

Samsung M3 93T5750CZA-CE6 2GB

Heoriady M471A1K43BB1-CRC 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

77 37
读取速度，GB/s

3,405.2 15.1
写入速度，GB/s

2,622.0 9.6
内存带宽，mbps

5300 21300

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

5-5-5-15 / 667 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

763 2758

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Micron Technology AFLD48EH1P 8GB

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Crucial Technology BLS4G4D240FSE.8FBD 4GB

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G Skill Intl F4-3600C16-8GTRGC 8GB

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Corsair CMK32GX4M2A2800C16 16GB

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Crucial Technology CT25664AA800.M16FM 2GB

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EVGA 8GX-D4-2800-MR 8GB

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Corsair CMX4GX3M2A1600C9 2GB

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Crucial Technology CT16G4DFRA32A.M16FR 16GB

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Samsung M393B1K70CH0-CH9 8GB

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Asgard VMA44UI-MEC1U2AW2 32GB

Asgard VMA44UI-MEC1U2AW2 32GB

Kingston 9905584-016.A00LF 4GB

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Micron Technology TEAMGROUP-UD4-2133 16GB

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