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Samsung M3 93T5750CZA-CE6 2GB
Kingston 9905625-142.A00G 16GB
比较
Samsung M3 93T5750CZA-CE6 2GB vs Kingston 9905625-142.A00G 16GB
总分
Samsung M3 93T5750CZA-CE6 2GB
总分
Kingston 9905625-142.A00G 16GB
差异
规格
评论
差异
需要考虑的原因
Samsung M3 93T5750CZA-CE6 2GB
报告一个错误
更快的读取速度,GB/s
3
13.8
测试中的平均数值
更快的写入速度,GB/s
2,622.0
10.7
测试中的平均数值
需要考虑的原因
Kingston 9905625-142.A00G 16GB
报告一个错误
低于PassMark测试中的延时,ns
29
77
左右 -166% 更低的延时
更高的内存带宽,mbps
19200
5300
左右 3.62 更高的带宽
规格
完整的技术规格清单
Samsung M3 93T5750CZA-CE6 2GB
Kingston 9905625-142.A00G 16GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
77
29
读取速度,GB/s
3,405.2
13.8
写入速度,GB/s
2,622.0
10.7
内存带宽,mbps
5300
19200
Other
描述
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
5-5-5-15 / 667 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
763
2737
Samsung M3 93T5750CZA-CE6 2GB RAM的比较
takeMS International AG TMS2GB264D082805EQ 2GB
Southland Microsystems 40002105-01 2GB
Kingston 9905625-142.A00G 16GB RAM的比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Kingston 9905403-090.A01LF 4GB
Panram International Corporation W4U3200PS-16G 16GB
Micron Technology 16JTF25664AZ-1G4F1 2GB
Crucial Technology CT8G4DFD824A.C16FADP 8GB
Samsung M3 93T5750CZA-CE6 2GB
Kingston 9905625-142.A00G 16GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Corsair CMK16GX4M2A2400C16 8GB
Kingston HP687515-H66-MCN 4GB
Corsair CMT128GX4M4C3200C16 32GB
Apacer Technology 78.01GA0.9K5 1GB
Corsair CMR32GX4M2D3000C16 16GB
Kingston 99U5471-030.A00LF 8GB
Corsair CMW16GX4M2Z2933C16 8GB
Samsung M471B5273DH0-CK0 4GB
Kingston 9905663-021.A00G 16GB
SK Hynix HYMP125U64CP8-S6 2GB
Team Group Inc. TEAMGROUP-ED4-2400 16GB
SK Hynix HYMP112U64CP8-S6 1GB
Colorful Technology Ltd BAPC08G2666D4S8 8GB
Corsair CMSX4GX3M1A1600C9 4GB
Crucial Technology BLS16G4D26BFST.16FD 16GB
Samsung M391B5673EH1-CH9 2GB
Patriot Memory (PDP Systems) 3200 C16 Series 8GB
Kingston K1N7HK-ELC 2GB
G Skill Intl F4-4200C19-4GTZ 4GB
Micron Technology 8KTF51264HZ-1G6E1 4GB
Crucial Technology BLM16G40C18U4BL.M8FB 16GB
报告一个错误
×
Bug description
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