Samsung M3 93T5750CZA-CE6 2GB vs Kingston 9905678-029.A00G 8GB

总分

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

总分

Kingston 9905678-029.A00G 8GB

Kingston 9905678-029.A00G 8GB

差异规格评论

差异

Samsung M3 93T5750CZA-CE6 2GB

需要考虑的原因
Samsung M3 93T5750CZA-CE6 2GB

报告一个错误

更快的读取速度，GB/s

3 12.6

测试中的平均数值

Kingston 9905678-029.A00G 8GB

需要考虑的原因
Kingston 9905678-029.A00G 8GB

报告一个错误

低于PassMark测试中的延时，ns

25 77

左右 -208% 更低的延时
更快的写入速度，GB/s

6.9 2,622.0

测试中的平均数值
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

Samsung M3 93T5750CZA-CE6 2GB

Kingston 9905678-029.A00G 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

77 25
读取速度，GB/s

3,405.2 12.6
写入速度，GB/s

2,622.0 6.9
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

763 2068

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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G Skill Intl F4-3200C16-8GVRB 8GB

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Samsung M3 93T5750CZA-CE6 2GB

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Nanya Technology M2X4G64CB8HG9N-DG 4GB

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AMD R538G1601U2S-UO 8GB

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Kingston 99U5474-010.A00LF 2GB

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SK Hynix HMA82GS7AFR8N-UH 16GB

SK Hynix HMA82GS7AFR8N-UH 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

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