Samsung M3 93T5750CZA-CE6 2GB vs Kingston 9965662-012.A01G 16GB

总分

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

总分

Kingston 9965662-012.A01G 16GB

Kingston 9965662-012.A01G 16GB

差异规格评论

差异

Samsung M3 93T5750CZA-CE6 2GB

需要考虑的原因
Samsung M3 93T5750CZA-CE6 2GB

报告一个错误

更快的读取速度，GB/s

3 11.9

测试中的平均数值

Kingston 9965662-012.A01G 16GB

需要考虑的原因
Kingston 9965662-012.A01G 16GB

报告一个错误

低于PassMark测试中的延时，ns

30 77

左右 -157% 更低的延时
更快的写入速度，GB/s

8.3 2,622.0

测试中的平均数值
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

Samsung M3 93T5750CZA-CE6 2GB

Kingston 9965662-012.A01G 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

77 30
读取速度，GB/s

3,405.2 11.9
写入速度，GB/s

2,622.0 8.3
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

763 2489

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Apacer Technology 78.B1GM3.C7W0B 4GB

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Samsung M3 93T5750CZA-CE6 2GB

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Kingston 9965662-012.A01G 16GB

Kingston 9965662-012.A01G 16GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB

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Micron Technology 16ATF2G64HZ-2G3E1 16GB

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Hexon Technology Pte Ltd HEXON 1GB

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G Skill Intl F4-4000C19-16GTZR 16GB

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Samsung M471B5173QH0-YK0 4GB

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Corsair CMD32GX4M2B3000C15 16GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Micron Technology 16ATF1G64AZ-2G1A2 8GB

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Corsair CMK32GX4M2E3200C16 16GB

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Corsair CMZ16GX3M2A1866C9 8GB

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Apacer Technology GD2.0918CT.001 4GB

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Kingston 9905471-071.A00LF 8GB

Crucial Technology BL8G32C16U4WL.M8FE 8GB

Crucial Technology BL8G32C16U4WL.M8FE 8GB