RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
Samsung M3 93T5750CZA-CE6 2GB
Kingston HP32D4S2S8ME-16 16GB

Samsung M3 93T5750CZA-CE6 2GB vs Kingston HP32D4S2S8ME-16 16GB

总分
star star star star star
Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

总分
star star star star star
Kingston HP32D4S2S8ME-16 16GB

Kingston HP32D4S2S8ME-16 16GB

差异 规格 评论

差异

Samsung M3 93T5750CZA-CE6 2GB 需要考虑的原因
Samsung M3 93T5750CZA-CE6 2GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 13.9
    测试中的平均数值
Kingston HP32D4S2S8ME-16 16GB 需要考虑的原因
Kingston HP32D4S2S8ME-16 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    43 left arrow 77
    左右 -79% 更低的延时
  • 更快的写入速度，GB/s
    9.9 left arrow 2,622.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 5300
    左右 4.83 更高的带宽

规格

完整的技术规格清单
Samsung M3 93T5750CZA-CE6 2GB
Kingston HP32D4S2S8ME-16 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    77 left arrow 43
  • 读取速度，GB/s
    3,405.2 left arrow 13.9
  • 写入速度，GB/s
    2,622.0 left arrow 9.9
  • 内存带宽，mbps
    5300 left arrow 25600
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    763 left arrow 2571

Samsung M3 93T5750CZA-CE6 2GB RAM的比较

takeMS International AG TMS2GB264D082805EQ 2GB
Southland Microsystems 40002105-01 2GB

Kingston HP32D4S2S8ME-16 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Patriot Memory (PDP Systems) PSD38G16002 8GB
Patriot Memory (PDP Systems) PSD38G16002 8GB
Kingston ACR26D4U9S8HJ-8 8GB
Kingston ACR26D4U9S8HJ-8 8GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
A-DATA Technology AO1P32NCSV1-BEWS 16GB
A-DATA Technology AO1P32NCSV1-BEWS 16GB
内存RAM
Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
Kingston HP32D4S2S8ME-16 16GB
Kingston HP32D4S2S8ME-16 16GB
内存RAM
Samsung M471B5273DH0-CH9 4GB
Samsung M471B5273DH0-CH9 4GB
Samsung M393B5170FH0-CH9 4GB
Samsung M393B5170FH0-CH9 4GB
内存RAM
G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Kingston 9905663-016.A00G 16GB
Kingston 9905663-016.A00G 16GB
内存RAM
Patriot Memory (PDP Systems) PSD22G8002 2GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
SK Hynix HMA41GR7AFR4N-TF 8GB
SK Hynix HMA41GR7AFR4N-TF 8GB
内存RAM
Kingston KHX1600C9D3/4G 4GB
Kingston KHX1600C9D3/4G 4GB
Shenzhen Chuangshifeida Technology DERLER 16GB2666MHz 16GB
Shenzhen Chuangshifeida Technology DERLER 16GB2666MHz 1
内存RAM
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
EVGA 16G-D4-2800-MR 4GB
EVGA 16G-D4-2800-MR 4GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Samsung M393A1G43DB1-CRC 8GB
Samsung M393A1G43DB1-CRC 8GB
内存RAM
Kingston ACR512X64D3S13C9G 4GB
Kingston ACR512X64D3S13C9G 4GB
Micron Technology TEAMGROUP-UD4-2400 16GB
Micron Technology TEAMGROUP-UD4-2400 16GB
内存RAM
Team Group Inc. Vulcan-1600 4GB
Team Group Inc. Vulcan-1600 4GB
Kingston KHX2133C13S4/8G 8GB
Kingston KHX2133C13S4/8G 8GB
内存RAM
Smart Modular SH564128FH8NZQNSCG 4GB
Smart Modular SH564128FH8NZQNSCG 4GB
Kingston 9905630-018.A00G 8GB
Kingston 9905630-018.A00G 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Micron Technology 36ASF4G72PZ-2G3A1 32GB
Micron Technology 36ASF4G72PZ-2G3A1 32GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Boya Microelectronics Inc. AM52SE24G64AP-SQ 32GB
Boya Microelectronics Inc. AM52SE24G64AP-SQ 32GB
内存RAM