Samsung M3 93T5750CZA-CE6 2GB vs Kingston KF2666C16D4/16G 16GB

总分

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

总分

Kingston KF2666C16D4/16G 16GB

Kingston KF2666C16D4/16G 16GB

差异规格评论

差异

Samsung M3 93T5750CZA-CE6 2GB

需要考虑的原因
Samsung M3 93T5750CZA-CE6 2GB

报告一个错误

更快的读取速度，GB/s

3 18.4

测试中的平均数值
更快的写入速度，GB/s

2,622.0 14.2

测试中的平均数值

Kingston KF2666C16D4/16G 16GB

需要考虑的原因
Kingston KF2666C16D4/16G 16GB

报告一个错误

低于PassMark测试中的延时，ns

35 77

左右 -120% 更低的延时
更高的内存带宽，mbps

21300 5300

左右 4.02 更高的带宽

规格

完整的技术规格清单

Samsung M3 93T5750CZA-CE6 2GB

Kingston KF2666C16D4/16G 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

77 35
读取速度，GB/s

3,405.2 18.4
写入速度，GB/s

2,622.0 14.2
内存带宽，mbps

5300 21300

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-21300, 1.2V, CAS Supported: 9 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 667 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

763 3278

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Samsung M3 93T5750CZA-CE6 2GB

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Kingston KF2666C16D4/16G 16GB

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Kingston 9905403-437.A01LF 4GB

Kingston 9905403-437.A01LF 4GB

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Golden Empire CL18-20-20 D4-3600 8GB

AMD AE34G2139U2 4GB

AMD AE34G2139U2 4GB

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G Skill Intl F4-3466C16-8GTZR 8GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

Crucial Technology CT16G4SFD824A.M16FD 16GB

Crucial Technology CT16G4SFD824A.M16FD 16GB