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Samsung M3 93T5750CZA-CE6 2GB
Kingston X6TCK6-MIE 32GB

Samsung M3 93T5750CZA-CE6 2GB vs Kingston X6TCK6-MIE 32GB

总分
star star star star star
Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

总分
star star star star star
Kingston X6TCK6-MIE 32GB

Kingston X6TCK6-MIE 32GB

差异 规格 评论

差异

Samsung M3 93T5750CZA-CE6 2GB 需要考虑的原因
Samsung M3 93T5750CZA-CE6 2GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 17.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,622.0 left arrow 12.8
    测试中的平均数值
Kingston X6TCK6-MIE 32GB 需要考虑的原因
Kingston X6TCK6-MIE 32GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    34 left arrow 77
    左右 -126% 更低的延时
  • 更高的内存带宽，mbps
    21300 left arrow 5300
    左右 4.02 更高的带宽

规格

完整的技术规格清单
Samsung M3 93T5750CZA-CE6 2GB
Kingston X6TCK6-MIE 32GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    77 left arrow 34
  • 读取速度，GB/s
    3,405.2 left arrow 17.2
  • 写入速度，GB/s
    2,622.0 left arrow 12.8
  • 内存带宽，mbps
    5300 left arrow 21300
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    763 left arrow 3288

Samsung M3 93T5750CZA-CE6 2GB RAM的比较

takeMS International AG TMS2GB264D082805EQ 2GB
Southland Microsystems 40002105-01 2GB

Kingston X6TCK6-MIE 32GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
Kingston X6TCK6-MIE 32GB
Kingston X6TCK6-MIE 32GB
内存RAM
SK Hynix HYMP31GF72CMP4D5Y5 8GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
G Skill Intl F4-3000C15-8GVRB 8GB
G Skill Intl F4-3000C15-8GVRB 8GB
内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
Apacer Technology 78.C1GS7.AUW0B 8GB
Apacer Technology 78.C1GS7.AUW0B 8GB
内存RAM
Elpida EBJ40EG8BFWB-JS-F 4GB
Elpida EBJ40EG8BFWB-JS-F 4GB
SK Hynix HMA851S6CJR6N-UH 4GB
SK Hynix HMA851S6CJR6N-UH 4GB
内存RAM
Kingston ACR512X64D3S16C11G 4GB
Kingston ACR512X64D3S16C11G 4GB
Samsung M471B5173CB0-YK0 4GB
Samsung M471B5173CB0-YK0 4GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M378A1G44AB0-CWE 8GB
Samsung M378A1G44AB0-CWE 8GB
内存RAM
A-DATA Technology AM2U16BC4P2-B05B 4GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
Kingston 9905701-008.A00G 16GB
Kingston 9905701-008.A00G 16GB
内存RAM
SK Hynix DDR2 800 2G 2GB
SK Hynix DDR2 800 2G 2GB
Nanya Technology NT8GA64D88AX3S-HR 8GB
Nanya Technology NT8GA64D88AX3S-HR 8GB
内存RAM
Samsung M386B4G70DM0-CMA4 32GB
Samsung M386B4G70DM0-CMA4 32GB
Gold Key Technology Co Ltd NMSO416F82-3200E 16GB
Gold Key Technology Co Ltd NMSO416F82-3200E 16GB
内存RAM
Kingston 99U5474-038.A00LF 4GB
Kingston 99U5474-038.A00LF 4GB
Gold Key Technology Co Ltd NMUD480E82-3000D 8GB
Gold Key Technology Co Ltd NMUD480E82-3000D 8GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
Apacer Technology 78.CAGMT.40C0B 8GB
Apacer Technology 78.CAGMT.40C0B 8GB
内存RAM
Kingston 9905471-076.A00LF 8GB
Kingston 9905471-076.A00LF 8GB
ATP Electronics Inc. A4G08QA8BNPBSE 8GB
ATP Electronics Inc. A4G08QA8BNPBSE 8GB
内存RAM
Kingston 99U5469-045.A00LF 4GB
Kingston 99U5469-045.A00LF 4GB
Corsair CM4X8GF2400C16N2 8GB
Corsair CM4X8GF2400C16N2 8GB
内存RAM
Samsung M471B5273DH0-CH9 4GB
Samsung M471B5273DH0-CH9 4GB
Mushkin MR[A/B]4U360JNNM8G 8GB
Mushkin MR[A/B]4U360JNNM8G 8GB
内存RAM