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Samsung M3 93T5750CZA-CE6 2GB
Kingston XW21KG-HYD-NX 8GB

Samsung M3 93T5750CZA-CE6 2GB vs Kingston XW21KG-HYD-NX 8GB

总分
star star star star star
Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

总分
star star star star star
Kingston XW21KG-HYD-NX 8GB

Kingston XW21KG-HYD-NX 8GB

差异 规格 评论

差异

Samsung M3 93T5750CZA-CE6 2GB 需要考虑的原因
Samsung M3 93T5750CZA-CE6 2GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 18.5
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,622.0 left arrow 12.6
    测试中的平均数值
Kingston XW21KG-HYD-NX 8GB 需要考虑的原因
Kingston XW21KG-HYD-NX 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    37 left arrow 77
    左右 -108% 更低的延时
  • 更高的内存带宽，mbps
    21300 left arrow 5300
    左右 4.02 更高的带宽

规格

完整的技术规格清单
Samsung M3 93T5750CZA-CE6 2GB
Kingston XW21KG-HYD-NX 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    77 left arrow 37
  • 读取速度，GB/s
    3,405.2 left arrow 18.5
  • 写入速度，GB/s
    2,622.0 left arrow 12.6
  • 内存带宽，mbps
    5300 left arrow 21300
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    763 left arrow 3100

Samsung M3 93T5750CZA-CE6 2GB RAM的比较

takeMS International AG TMS2GB264D082805EQ 2GB
Southland Microsystems 40002105-01 2GB

Kingston XW21KG-HYD-NX 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
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内存RAM
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Micron Technology 4ATF1G64HZ-3G2E2 8GB
内存RAM
Patriot Memory (PDP Systems) PSD38G16002 8GB
Patriot Memory (PDP Systems) PSD38G16002 8GB
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G Skill Intl F4-4000C18-8GTZRB 8GB
内存RAM
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Patriot Memory (PDP Systems) 2400 C15 Series 4GB
内存RAM
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内存RAM
Elpida EBJ40EG8BFWB-JS-F 4GB
Elpida EBJ40EG8BFWB-JS-F 4GB
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Corsair CM4X8GF2666C16K8 8GB
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