Samsung M3 93T5750CZA-CE6 2GB vs Micron Technology 8ATF1G64AZ-2G1B1 8GB

总分

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

总分

Micron Technology 8ATF1G64AZ-2G1B1 8GB

Micron Technology 8ATF1G64AZ-2G1B1 8GB

差异规格评论

差异

Samsung M3 93T5750CZA-CE6 2GB

需要考虑的原因
Samsung M3 93T5750CZA-CE6 2GB

报告一个错误

更快的读取速度，GB/s

3 15.5

测试中的平均数值
更快的写入速度，GB/s

2,622.0 11.8

测试中的平均数值

Micron Technology 8ATF1G64AZ-2G1B1 8GB

需要考虑的原因
Micron Technology 8ATF1G64AZ-2G1B1 8GB

报告一个错误

低于PassMark测试中的延时，ns

32 77

左右 -141% 更低的延时
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

Samsung M3 93T5750CZA-CE6 2GB

Micron Technology 8ATF1G64AZ-2G1B1 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

77 32
读取速度，GB/s

3,405.2 15.5
写入速度，GB/s

2,622.0 11.8
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

763 2960

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

G Skill Intl F4-3600C14-8GTZNB 8GB

G Skill Intl F4-3600C14-8GTZNB 8GB

Samsung M393B5170FH0-CH9 4GB

Samsung M393B5170FH0-CH9 4GB

Kingston KVR16N11/8-SP 8GB

Kingston KVR16N11/8-SP 8GB

ASint Technology SSA302G08-EGN1C 4GB

ASint Technology SSA302G08-EGN1C 4GB

Kingston 9905678-139.A00G 8GB

Kingston 9905678-139.A00G 8GB

Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

Corsair CMWX8GD3600C18W2D 8GB

Corsair CMWX8GD3600C18W2D 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB

Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16

Mushkin 991988 (996988) 4GB

Mushkin 991988 (996988) 4GB

Corsair MK16GX44A2666C16 4GB

Corsair MK16GX44A2666C16 4GB

Kingston 99U5474-038.A00LF 4GB

Kingston 99U5474-038.A00LF 4GB

G Skill Intl F4-2800C16-4GRK 4GB

G Skill Intl F4-2800C16-4GRK 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Kingston 99U5700-028.A00G 8GB

Kingston 99U5700-028.A00G 8GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Micron Technology 36ASF4G72PZ-2G6D1 32GB

Micron Technology 36ASF4G72PZ-2G6D1 32GB

Nanya Technology NT1GT72U8PA0BY-37B 1GB

Nanya Technology NT1GT72U8PA0BY-37B 1GB

Kingston 9905783-025.A01G 16GB

Kingston 9905783-025.A01G 16GB

Kingston 9965525-155.A00LF 8GB

Kingston 9965525-155.A00LF 8GB

SK Hynix HMA41GR7MFR4N-TF 8GB

SK Hynix HMA41GR7MFR4N-TF 8GB

Kingston 9905403-090.A01LF 4GB

Kingston 9905403-090.A01LF 4GB

G Skill Intl F4-2400C17-4GVR 4GB

G Skill Intl F4-2400C17-4GVR 4GB

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

G Skill Intl F4-3866C18-4GVK 4GB

G Skill Intl F4-3866C18-4GVK 4GB

Kingston 9905471-076.A00LF 8GB

Kingston 9905471-076.A00LF 8GB

Kingston 9905678-065.A00G 8GB

Kingston 9905678-065.A00G 8GB