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Samsung M3 93T5750CZA-CE6 2GB
Patriot Memory (PDP Systems) 3200 C16 Series 8GB

Samsung M3 93T5750CZA-CE6 2GB vs Patriot Memory (PDP Systems) 3200 C16 Series 8GB

总分
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Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

总分
star star star star star
Patriot Memory (PDP Systems) 3200 C16 Series 8GB

Patriot Memory (PDP Systems) 3200 C16 Series 8GB

差异 规格 评论

差异

Samsung M3 93T5750CZA-CE6 2GB 需要考虑的原因
Samsung M3 93T5750CZA-CE6 2GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 18
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,622.0 left arrow 14.3
    测试中的平均数值
Patriot Memory (PDP Systems) 3200 C16 Series 8GB 需要考虑的原因
Patriot Memory (PDP Systems) 3200 C16 Series 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    30 left arrow 77
    左右 -157% 更低的延时
  • 更高的内存带宽，mbps
    17000 left arrow 5300
    左右 3.21 更高的带宽

规格

完整的技术规格清单
Samsung M3 93T5750CZA-CE6 2GB
Patriot Memory (PDP Systems) 3200 C16 Series 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    77 left arrow 30
  • 读取速度，GB/s
    3,405.2 left arrow 18.0
  • 写入速度，GB/s
    2,622.0 left arrow 14.3
  • 内存带宽，mbps
    5300 left arrow 17000
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    763 left arrow 3466

Samsung M3 93T5750CZA-CE6 2GB RAM的比较

takeMS International AG TMS2GB264D082805EQ 2GB
Southland Microsystems 40002105-01 2GB

Patriot Memory (PDP Systems) 3200 C16 Series 8GB RAM的比较

Corsair CMSX32GX4M2A3200C22 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

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内存RAM
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