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Samsung M3 93T5750CZA-CE6 2GB
Patriot Memory (PDP Systems) PSD416G21332S 16GB

Samsung M3 93T5750CZA-CE6 2GB vs Patriot Memory (PDP Systems) PSD416G21332S 16GB

总分
star star star star star
Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

总分
star star star star star
Patriot Memory (PDP Systems) PSD416G21332S 16GB

Patriot Memory (PDP Systems) PSD416G21332S 16GB

差异 规格 评论

差异

Samsung M3 93T5750CZA-CE6 2GB 需要考虑的原因
Samsung M3 93T5750CZA-CE6 2GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 10.3
    测试中的平均数值
Patriot Memory (PDP Systems) PSD416G21332S 16GB 需要考虑的原因
Patriot Memory (PDP Systems) PSD416G21332S 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    30 left arrow 77
    左右 -157% 更低的延时
  • 更快的写入速度，GB/s
    9.5 left arrow 2,622.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 5300
    左右 3.21 更高的带宽

规格

完整的技术规格清单
Samsung M3 93T5750CZA-CE6 2GB
Patriot Memory (PDP Systems) PSD416G21332S 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    77 left arrow 30
  • 读取速度，GB/s
    3,405.2 left arrow 10.3
  • 写入速度，GB/s
    2,622.0 left arrow 9.5
  • 内存带宽，mbps
    5300 left arrow 17000
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    763 left arrow 1651

Samsung M3 93T5750CZA-CE6 2GB RAM的比较

takeMS International AG TMS2GB264D082805EQ 2GB
Southland Microsystems 40002105-01 2GB

Patriot Memory (PDP Systems) PSD416G21332S 16GB RAM的比较

STEC (Silicon Tech) S1024R3NN2QK-I 1GB
SK Hynix HYMP112U64CP8-S5 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
Patriot Memory (PDP Systems) PSD416G21332S 16GB
Patriot Memory (PDP Systems) PSD416G21332S 16GB
内存RAM
Kingston KVR800D2N6/2G 2GB
Kingston KVR800D2N6/2G 2GB
Team Group Inc. TEAMGROUP-UD4-3200 8GB
Team Group Inc. TEAMGROUP-UD4-3200 8GB
内存RAM
Kingston 9905471-076.A00LF 8GB
Kingston 9905471-076.A00LF 8GB
Crucial Technology BLT8G4D32AET4K.M8FE1 8GB
Crucial Technology BLT8G4D32AET4K.M8FE1 8GB
内存RAM
Kingston 9905403-515.A00LF 8GB
Kingston 9905403-515.A00LF 8GB
G Skill Intl F4-4400C19-16GTZR 16GB
G Skill Intl F4-4400C19-16GTZR 16GB
内存RAM
Corsair CMSX4GX3M1A1600C9 4GB
Corsair CMSX4GX3M1A1600C9 4GB
G Skill Intl F4-4400C19-8GTZSW 8GB
G Skill Intl F4-4400C19-8GTZSW 8GB
内存RAM
Samsung DDR3 8GB 1600MHz 8GB
Samsung DDR3 8GB 1600MHz 8GB
Micron Technology MTA8ATF1G64HZ-2G3B1 16GB
Micron Technology MTA8ATF1G64HZ-2G3B1 16GB
内存RAM
Samsung M393B2G70BH0-CH9 16GB
Samsung M393B2G70BH0-CH9 16GB
Corsair CMT64GX4M4Z3600C18 16GB
Corsair CMT64GX4M4Z3600C18 16GB
内存RAM
Kingston 9905471-006.A01LF 4GB
Kingston 9905471-006.A01LF 4GB
Micron Technology 16ATF4G64AZ-2G6B1 32GB
Micron Technology 16ATF4G64AZ-2G6B1 32GB
内存RAM
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
内存RAM
Samsung M471B1G73QH0-YK0 8GB
Samsung M471B1G73QH0-YK0 8GB
Corsair CMK16GX4M4A2800C16 4GB
Corsair CMK16GX4M4A2800C16 4GB
内存RAM
AMD AE34G1601U1 4GB
AMD AE34G1601U1 4GB
A-DATA Technology DDR4 2666 2OZ 4GB
A-DATA Technology DDR4 2666 2OZ 4GB
内存RAM
Kingston 9905584-016.A00LF 4GB
Kingston 9905584-016.A00LF 4GB
Corsair CM4X8GF2666C18S2 8GB
Corsair CM4X8GF2666C18S2 8GB
内存RAM
Kingston 9905471-006.A00LF 4GB
Kingston 9905471-006.A00LF 4GB
Corsair CMD8GX4M2B3600C18 4GB
Corsair CMD8GX4M2B3600C18 4GB
内存RAM
Kingston KVR533D2N4 512MB
Kingston KVR533D2N4 512MB
Kingston 9965589-033.D00G 8GB
Kingston 9965589-033.D00G 8GB
内存RAM