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Samsung M3 93T5750CZA-CE6 2GB
Patriot Memory (PDP Systems) PSD48G213381S 8GB

Samsung M3 93T5750CZA-CE6 2GB vs Patriot Memory (PDP Systems) PSD48G213381S 8GB

总分
star star star star star
Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

总分
star star star star star
Patriot Memory (PDP Systems) PSD48G213381S 8GB

Patriot Memory (PDP Systems) PSD48G213381S 8GB

差异 规格 评论

差异

Samsung M3 93T5750CZA-CE6 2GB 需要考虑的原因
Samsung M3 93T5750CZA-CE6 2GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 12.7
    测试中的平均数值
Patriot Memory (PDP Systems) PSD48G213381S 8GB 需要考虑的原因
Patriot Memory (PDP Systems) PSD48G213381S 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    29 left arrow 77
    左右 -166% 更低的延时
  • 更快的写入速度，GB/s
    9.1 left arrow 2,622.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 5300
    左右 3.21 更高的带宽

规格

完整的技术规格清单
Samsung M3 93T5750CZA-CE6 2GB
Patriot Memory (PDP Systems) PSD48G213381S 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    77 left arrow 29
  • 读取速度，GB/s
    3,405.2 left arrow 12.7
  • 写入速度，GB/s
    2,622.0 left arrow 9.1
  • 内存带宽，mbps
    5300 left arrow 17000
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    763 left arrow 2185

Samsung M3 93T5750CZA-CE6 2GB RAM的比较

takeMS International AG TMS2GB264D082805EQ 2GB
Southland Microsystems 40002105-01 2GB

Patriot Memory (PDP Systems) PSD48G213381S 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
Patriot Memory (PDP Systems) PSD48G213381S 8GB
Patriot Memory (PDP Systems) PSD48G213381S 8GB
内存RAM
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Kingston 9905584-016.A00LF 4GB
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G Skill Intl F4-4133C19-8GTZSWF 8GB
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Nanya Technology NT512T64U88B0BY-3C 512MB
Nanya Technology NT512T64U88B0BY-3C 512MB
Corsair CMW128GX4M4E3200C16 32GB
Corsair CMW128GX4M4E3200C16 32GB
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Kingston 9905403-515.A00LF 8GB
Kingston 9905403-515.A00LF 8GB
Essencore Limited KD4AGS88C-26N1900 16GB
Essencore Limited KD4AGS88C-26N1900 16GB
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Samsung M393B1K70CHD-CH9 8GB
Samsung M393B1K70CHD-CH9 8GB
Crucial Technology CT4G4SFS824A.C8FBR2 4GB
Crucial Technology CT4G4SFS824A.C8FBR2 4GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Micron Technology 18ASF2G72PDZ-2G6D1 16GB
Micron Technology 18ASF2G72PDZ-2G6D1 16GB
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Kingston 9965525-018.A00LF 4GB
Kingston 9965525-018.A00LF 4GB
Team Group Inc. TEAMGROUP-UD4-4133 8GB
Team Group Inc. TEAMGROUP-UD4-4133 8GB
内存RAM
Kingston 9905469-143.A00LF 4GB
Kingston 9905469-143.A00LF 4GB
G Skill Intl F4-3733C17-16GTZKK 16GB
G Skill Intl F4-3733C17-16GTZKK 16GB
内存RAM
Crucial Technology BL8G26C16U4B.8FD 8GB
Crucial Technology BL8G26C16U4B.8FD 8GB
G Skill Intl F4-3000C16-8GVRB 8GB
G Skill Intl F4-3000C16-8GVRB 8GB
内存RAM
Kingston 9905471-001.A01LF 2GB
Kingston 9905471-001.A01LF 2GB
Corsair CMD16GX4M4B3200C16 4GB
Corsair CMD16GX4M4B3200C16 4GB
内存RAM
Corsair CMX4GX3M2A1600C9 2GB
Corsair CMX4GX3M2A1600C9 2GB
G Skill Intl F4-4133C19-8GTZC 8GB
G Skill Intl F4-4133C19-8GTZC 8GB
内存RAM
Kingston 9965433-034.A00LF 4GB
Kingston 9965433-034.A00LF 4GB
G Skill Intl F4-3200C14-16GTZKO 16GB
G Skill Intl F4-3200C14-16GTZKO 16GB
内存RAM
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F2-8500CL5-2GBPI 2GB
SK Hynix HMA82GS6CJR8N-UH 16GB
SK Hynix HMA82GS6CJR8N-UH 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-3466C16-8GTZKW 8GB
G Skill Intl F4-3466C16-8GTZKW 8GB
内存RAM