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Samsung M3 93T5750CZA-CE6 2GB
Samsung M378A1G44BB0-CWE 8GB

Samsung M3 93T5750CZA-CE6 2GB vs Samsung M378A1G44BB0-CWE 8GB

总分
star star star star star
Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

总分
star star star star star
Samsung M378A1G44BB0-CWE 8GB

Samsung M378A1G44BB0-CWE 8GB

差异 规格 评论

差异

Samsung M3 93T5750CZA-CE6 2GB 需要考虑的原因
Samsung M3 93T5750CZA-CE6 2GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 15.1
    测试中的平均数值
Samsung M378A1G44BB0-CWE 8GB 需要考虑的原因
Samsung M378A1G44BB0-CWE 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    35 left arrow 77
    左右 -120% 更低的延时
  • 更快的写入速度，GB/s
    9.2 left arrow 2,622.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 5300
    左右 4.83 更高的带宽

规格

完整的技术规格清单
Samsung M3 93T5750CZA-CE6 2GB
Samsung M378A1G44BB0-CWE 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    77 left arrow 35
  • 读取速度，GB/s
    3,405.2 left arrow 15.1
  • 写入速度，GB/s
    2,622.0 left arrow 9.2
  • 内存带宽，mbps
    5300 left arrow 25600
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    763 left arrow 2488

Samsung M3 93T5750CZA-CE6 2GB RAM的比较

takeMS International AG TMS2GB264D082805EQ 2GB
Southland Microsystems 40002105-01 2GB

Samsung M378A1G44BB0-CWE 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M393B1G70BH0-CK0 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston 99U5471-030.A00LF 8GB
Kingston 99U5471-030.A00LF 8GB
Samsung M471A2K43CB1-CTD 16GB
Samsung M471A2K43CB1-CTD 16GB
内存RAM
Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
Samsung M378A1G44BB0-CWE 8GB
Samsung M378A1G44BB0-CWE 8GB
内存RAM
G Skill Intl F4-4000C14-16GTZR 16GB
G Skill Intl F4-4000C14-16GTZR 16GB
Micron Technology 8ATF1G64HZ-2G3A1 8GB
Micron Technology 8ATF1G64HZ-2G3A1 8GB
内存RAM
G Skill Intl F5-5600J4040C16G 16GB
G Skill Intl F5-5600J4040C16G 16GB
Apacer Technology 78.CAGNT.AR40B 8GB
Apacer Technology 78.CAGNT.AR40B 8GB
内存RAM
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Micron Technology 9ASF51272AZ-2G3B1 4GB
Micron Technology 9ASF51272AZ-2G3B1 4GB
内存RAM
Kingston 9905403-447.A00LF 4GB
Kingston 9905403-447.A00LF 4GB
Micron Technology 36ASF4G72PZ-2G1A1 32GB
Micron Technology 36ASF4G72PZ-2G1A1 32GB
内存RAM
Kingston 99U5474-023.A00LF 4GB
Kingston 99U5474-023.A00LF 4GB
A-DATA Technology AO1P26KCST2-BZISHC 16GB
A-DATA Technology AO1P26KCST2-BZISHC 16GB
内存RAM
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Crucial Technology CB8GU2400.C8D 8GB
Crucial Technology CB8GU2400.C8D 8GB
内存RAM
Kingston 9965525-144.A00LF 8GB
Kingston 9965525-144.A00LF 8GB
Apacer Technology D22.2221ZA.001 8GB
Apacer Technology D22.2221ZA.001 8GB
内存RAM
Kingston 9905403-090.A01LF 4GB
Kingston 9905403-090.A01LF 4GB
Kingston 9905665-011.A00G 4GB
Kingston 9905665-011.A00G 4GB
内存RAM
Kingston 9965525-018.A00LF 4GB
Kingston 9965525-018.A00LF 4GB
Corsair CMD16GX4M4C3200C15 4GB
Corsair CMD16GX4M4C3200C15 4GB
内存RAM
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Corsair CMK64GX4M82800C14 8GB
Corsair CMK64GX4M82800C14 8GB
内存RAM
Samsung M393B2G70BH0-CH9 16GB
Samsung M393B2G70BH0-CH9 16GB
G Skill Intl F4-3200C15-16GVR 16GB
G Skill Intl F4-3200C15-16GVR 16GB
内存RAM
Samsung M378B5173BH0-CH9 4GB
Samsung M378B5173BH0-CH9 4GB
Kingston 9905643-009.A00G 8GB
Kingston 9905643-009.A00G 8GB
内存RAM