Samsung M3 93T5750CZA-CE6 2GB vs Samsung M471A1K43CBCBCRC 8GB

总分

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

总分

Samsung M471A1K43CBCBCRC 8GB

Samsung M471A1K43CBCBCRC 8GB

差异规格评论

差异

Samsung M3 93T5750CZA-CE6 2GB

需要考虑的原因
Samsung M3 93T5750CZA-CE6 2GB

报告一个错误

Samsung M471A1K43CBCBCRC 8GB

需要考虑的原因
Samsung M471A1K43CBCBCRC 8GB

报告一个错误

低于PassMark测试中的延时，ns

38 77

左右 -103% 更低的延时
更快的读取速度，GB/s

9.3 3

测试中的平均数值
更快的写入速度，GB/s

6.1 2,622.0

测试中的平均数值
更高的内存带宽，mbps

19200 5300

左右 3.62 更高的带宽

规格

完整的技术规格清单

Samsung M3 93T5750CZA-CE6 2GB

Samsung M471A1K43CBCBCRC 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

77 38
读取速度，GB/s

3,405.2 9.3
写入速度，GB/s

2,622.0 6.1
内存带宽，mbps

5300 19200

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 667 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

763 1493

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Corsair CMH16GX4M2Z3600C18 8GB

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Corsair CMD8GX3M2A2933C12 4GB

Corsair CMD8GX3M2A2933C12 4GB

Apacer Technology 78.DAGQ7.40B0B 16GB

Apacer Technology 78.DAGQ7.40B0B 16GB

Kingston 99U5595-005.A00LF 2GB

Kingston 99U5595-005.A00LF 2GB

Micron Technology ILG8GS2400A 8GB

Micron Technology ILG8GS2400A 8GB

Nanya Technology M2F4G64CB8HB9N-CG 4GB

Nanya Technology M2F4G64CB8HB9N-CG 4GB

Kingston MSI24D4U7D8MD-16 16GB

Kingston MSI24D4U7D8MD-16 16GB

Kingston 9905403-011.A03LF 2GB

Kingston 9905403-011.A03LF 2GB

Boya Microelectronics Inc. AM52SE24G64AP-SQ 32GB

Boya Microelectronics Inc. AM52SE24G64AP-SQ 32GB

Kingston KHX1600C9D3/8G 8GB

Kingston KHX1600C9D3/8G 8GB

G Skill Intl F4-2133C15-4GVR 4GB

G Skill Intl F4-2133C15-4GVR 4GB

SK Hynix HMT42GR7AFR4A-PB 16GB

SK Hynix HMT42GR7AFR4A-PB 16GB

Apacer Technology 78.BAGN8.40C0B 4GB

Apacer Technology 78.BAGN8.40C0B 4GB

Samsung M4 70T5663CZ3-CE6 2GB

Samsung M4 70T5663CZ3-CE6 2GB

Hoodisk Electronics Co Ltd GKE800UD102408-2666 8GB

Hoodisk Electronics Co Ltd GKE800UD102408-2666 8GB

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

Micron Technology 4ATF51264HZ-2G3B2 4GB

Micron Technology 4ATF51264HZ-2G3B2 4GB

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

Kingston 9905702-137.A00G 8GB

Kingston 9905702-137.A00G 8GB

SK Hynix HMT42GR7AFR4A-PB 16GB

SK Hynix HMT42GR7AFR4A-PB 16GB

Crucial Technology CT8G4SFD824A.M16FB 8GB

Crucial Technology CT8G4SFD824A.M16FB 8GB

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

Corsair CMK32GX4M4K4133C19 8GB

Corsair CMK32GX4M4K4133C19 8GB

Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMZ16GX3M2A2400C10 8GB

Crucial Technology CT8G4DFRA266.C8FE 8GB

Crucial Technology CT8G4DFRA266.C8FE 8GB

G Skill Intl F2-5300CL4-1GBSA 1GB

G Skill Intl F2-5300CL4-1GBSA 1GB

Micron Technology 8ATF1G64HZ-2G3A1 8GB

Micron Technology 8ATF1G64HZ-2G3A1 8GB