Samsung M3 93T5750CZA-CE6 2GB vs SanMax Technologies Inc. SMD4-U8G46ME-32AA 8GB

总分

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

总分

SanMax Technologies Inc. SMD4-U8G46ME-32AA 8GB

SanMax Technologies Inc. SMD4-U8G46ME-32AA 8GB

差异规格评论

差异

Samsung M3 93T5750CZA-CE6 2GB

需要考虑的原因
Samsung M3 93T5750CZA-CE6 2GB

报告一个错误

更快的读取速度，GB/s

3 18.4

测试中的平均数值
更快的写入速度，GB/s

2,622.0 13.0

测试中的平均数值

SanMax Technologies Inc. SMD4-U8G46ME-32AA 8GB

需要考虑的原因
SanMax Technologies Inc. SMD4-U8G46ME-32AA 8GB

报告一个错误

低于PassMark测试中的延时，ns

30 77

左右 -157% 更低的延时
更高的内存带宽，mbps

25600 5300

左右 4.83 更高的带宽

规格

完整的技术规格清单

Samsung M3 93T5750CZA-CE6 2GB

SanMax Technologies Inc. SMD4-U8G46ME-32AA 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

77 30
读取速度，GB/s

3,405.2 18.4
写入速度，GB/s

2,622.0 13.0
内存带宽，mbps

5300 25600

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

5-5-5-15 / 667 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

763 3277

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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最新比较

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

SanMax Technologies Inc. SMD4-U8G46ME-32AA 8GB

SanMax Technologies Inc. SMD4-U8G46ME-32AA 8GB

Kingston 99U5584-004.A00LF 4GB

Kingston 99U5584-004.A00LF 4GB

Hynix Semiconductor (Hyundai Electronics) HMA451U6AFR8N-TF 4GB

Hynix Semiconductor (Hyundai Electronics) HMA451U6AFR8N

G Skill Intl F3-1866C8-8GTX 8GB

G Skill Intl F3-1866C8-8GTX 8GB

G Skill Intl F4-4800C18-8GTRS 8GB

G Skill Intl F4-4800C18-8GTRS 8GB

Kingston 2GB-DDR2 800Mhz 2GB

Kingston 2GB-DDR2 800Mhz 2GB

Kingston 9905678-173.A00G 8GB

Kingston 9905678-173.A00G 8GB

Kingston 99U5474-037.A00LF 4GB

Kingston 99U5474-037.A00LF 4GB

Kingston MSI26D4S9D8ME-16 16GB

Kingston MSI26D4S9D8ME-16 16GB

Kingston KHX318C10FR/8G 8GB

Kingston KHX318C10FR/8G 8GB

Crucial Technology CT32G4SFD832A.M16FB 32GB

Crucial Technology CT32G4SFD832A.M16FB 32GB

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

Samsung M471A1K43CBCBCRC 8GB

Samsung M471A1K43CBCBCRC 8GB

Kingston ACR512X64D3S13C9G 4GB

Kingston ACR512X64D3S13C9G 4GB

Ramaxel Technology RMSA3320MJ78HAF-3200 8GB

Ramaxel Technology RMSA3320MJ78HAF-3200 8GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

Kingston 9965662-015.A00G 16GB

Kingston 9965662-015.A00G 16GB

Apacer Technology 78.01GA0.9K5 1GB

Apacer Technology 78.01GA0.9K5 1GB

G Skill Intl F4-2400C15-8GFX 8GB

G Skill Intl F4-2400C15-8GFX 8GB

SK Hynix HYMP164U64CP6-Y5 512MB

SK Hynix HYMP164U64CP6-Y5 512MB

Corsair CMSO32GX4M2A2133C15 16GB

Corsair CMSO32GX4M2A2133C15 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Panram International Corporation W4U3200PS-16G 16GB

Panram International Corporation W4U3200PS-16G 16GB

Nanya Technology M2F4GH64CB8HB6N-CG 4GB

Nanya Technology M2F4GH64CB8HB6N-CG 4GB

Crucial Technology BLS4G4D240FSE.8FBD2 4GB

Crucial Technology BLS4G4D240FSE.8FBD2 4GB

Kingston 99U5474-022.A00LF 2GB

Kingston 99U5474-022.A00LF 2GB

Crucial Technology CT8G4SFD824A.C16FADP 8GB

Crucial Technology CT8G4SFD824A.C16FADP 8GB