Samsung M323R2GA3BB0-CQKOD 16GB vs Samsung M471A2K43DB1-CWE 16GB

总分

Samsung M323R2GA3BB0-CQKOD 16GB

Samsung M323R2GA3BB0-CQKOD 16GB

总分

Samsung M471A2K43DB1-CWE 16GB

Samsung M471A2K43DB1-CWE 16GB

差异规格评论

差异

Samsung M323R2GA3BB0-CQKOD 16GB

需要考虑的原因
Samsung M323R2GA3BB0-CQKOD 16GB

报告一个错误

低于PassMark测试中的延时，ns

25 37

左右 32% 更低的延时

Samsung M471A2K43DB1-CWE 16GB

需要考虑的原因
Samsung M471A2K43DB1-CWE 16GB

报告一个错误

更快的读取速度，GB/s

15.8 13.4

测试中的平均数值
更快的写入速度，GB/s

13.5 12.1

测试中的平均数值
更高的内存带宽，mbps

25600 19200

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung M323R2GA3BB0-CQKOD 16GB

Samsung M471A2K43DB1-CWE 16GB

主要特点

存储器类型

DDR5 DDR4
PassMark中的延时，ns

25 37
读取速度，GB/s

13.4 15.8
写入速度，GB/s

12.1 13.5
内存带宽，mbps

19200 25600

Other

描述

PC5-19200, 1.1V, CAS Supported: 22 26 28 30 32 36 40 42 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

no data / 2400 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

3419 3075

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Swissbit MEU25664D6BC2EP-30 2GB

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Corsair CMW16GX4M2K4266C19 8GB

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SK Hynix HYMP31GF72CMP4D5Y5 8GB

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Apacer Technology 78.A1GC6.9H10C 2GB

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Samsung M323R2GA3BB0-CQKOD 16GB

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SK Hynix HMAA1GS6CJR6N-XN 8GB

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

Crucial Technology BLS4G4D240FSB.8FARG? 4GB

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SK Hynix HMT451S6BFR8A-PB 4GB

SK Hynix HMT451S6BFR8A-PB 4GB

Smart Modular SMS4WEC3C0K0446SCG 4GB

Smart Modular SMS4WEC3C0K0446SCG 4GB

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Kingston KHX2666C13/16GX 16GB

Kingston KHX2666C13/16GX 16GB

Corsair VSA2GSDS667C4 2GB

Corsair VSA2GSDS667C4 2GB

Kingston ACR26D4S9S8ME-8 8GB

Kingston ACR26D4S9S8ME-8 8GB