Samsung M378A1G43DB0-CPB 8GB vs Corsair CMD16GX4M2B3200C14 8GB

总分

Samsung M378A1G43DB0-CPB 8GB

Samsung M378A1G43DB0-CPB 8GB

总分

Corsair CMD16GX4M2B3200C14 8GB

Corsair CMD16GX4M2B3200C14 8GB

差异规格评论

差异

Samsung M378A1G43DB0-CPB 8GB

需要考虑的原因
Samsung M378A1G43DB0-CPB 8GB

报告一个错误

Corsair CMD16GX4M2B3200C14 8GB

需要考虑的原因
Corsair CMD16GX4M2B3200C14 8GB

报告一个错误

低于PassMark测试中的延时，ns

23 36

左右 -57% 更低的延时
更快的读取速度，GB/s

17 15

测试中的平均数值
更快的写入速度，GB/s

12.5 10.3

测试中的平均数值

规格

完整的技术规格清单

Samsung M378A1G43DB0-CPB 8GB

Corsair CMD16GX4M2B3200C14 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

36 23
读取速度，GB/s

15.0 17.0
写入速度，GB/s

10.3 12.5
内存带宽，mbps

17000 17000

Other

描述

PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

14-14-14, 15-15-15, 16-16-16 / 2133 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2569 2963

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMK16GX4M2F4500C19 8GB

Corsair CMK16GX4M2F4500C19 8GB

Corsair CMK16GX4M2F4500C19 8GB

Corsair CMK16GX4M2F4500C19 8GB

Samsung M3 93T5750CZA-CE6 2GB

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G Skill Intl F4-2133C15-4GVR 4GB

Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMZ16GX3M2A2400C10 8GB

SK Hynix HMA81GS6DJR8N-VK 8GB

SK Hynix HMA81GS6DJR8N-VK 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

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Kingston KF3733C19D4/16GX 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

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Crucial Technology BL32G32C16U4WL.M16FB 32GB

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Kingston 99U5474-028.A00LF 4GB

Kingston KHX4133C19D4/8GX 8GB

Kingston KHX4133C19D4/8GX 8GB