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Samsung M378A1G43DB0-CPB 8GB
Corsair CMD16GX4M4A2666C16 4GB

Samsung M378A1G43DB0-CPB 8GB vs Corsair CMD16GX4M4A2666C16 4GB

总分
star star star star star
Samsung M378A1G43DB0-CPB 8GB

Samsung M378A1G43DB0-CPB 8GB

总分
star star star star star
Corsair CMD16GX4M4A2666C16 4GB

Corsair CMD16GX4M4A2666C16 4GB

差异 规格 评论

差异

Samsung M378A1G43DB0-CPB 8GB 需要考虑的原因
Samsung M378A1G43DB0-CPB 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    36 left arrow 37
    左右 3% 更低的延时
  • 更快的读取速度，GB/s
    15 left arrow 14.5
    测试中的平均数值
Corsair CMD16GX4M4A2666C16 4GB 需要考虑的原因
Corsair CMD16GX4M4A2666C16 4GB
报告一个错误
  • 更快的写入速度，GB/s
    11.4 left arrow 10.3
    测试中的平均数值

规格

完整的技术规格清单
Samsung M378A1G43DB0-CPB 8GB
Corsair CMD16GX4M4A2666C16 4GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    36 left arrow 37
  • 读取速度，GB/s
    15.0 left arrow 14.5
  • 写入速度，GB/s
    10.3 left arrow 11.4
  • 内存带宽，mbps
    17000 left arrow 17000
Other
  • 描述
    PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16 left arrow PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
  • 时序/时钟速度
    14-14-14, 15-15-15, 16-16-16 / 2133 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2569 left arrow 2847

Samsung M378A1G43DB0-CPB 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB

Corsair CMD16GX4M4A2666C16 4GB RAM的比较

Samsung M378A1G43EB1-CPB 8GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M378A1G43DB0-CPB 8GB
Samsung M378A1G43DB0-CPB 8GB
Corsair CMD16GX4M4A2666C16 4GB
Corsair CMD16GX4M4A2666C16 4GB
内存RAM
Samsung M471B5273DH0-CH9 4GB
Samsung M471B5273DH0-CH9 4GB
Crucial Technology BLS8G4D26BFSBK.8FBD 8GB
Crucial Technology BLS8G4D26BFSBK.8FBD 8GB
内存RAM
Samsung M395T2863QZ4-CF76 1GB
Samsung M395T2863QZ4-CF76 1GB
SK Hynix HMA82GR7AFR4N-TF 16GB
SK Hynix HMA82GR7AFR4N-TF 16GB
内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
Micron Technology 18ASF1G72PZ-2G1A2 8GB
Micron Technology 18ASF1G72PZ-2G1A2 8GB
内存RAM
Samsung M393B1G70BH0-YK0 8GB
Samsung M393B1G70BH0-YK0 8GB
Crucial Technology CT8G4DFRA32A.M4FF 8GB
Crucial Technology CT8G4DFRA32A.M4FF 8GB
内存RAM
AMD R5S38G1601U2S 8GB
AMD R5S38G1601U2S 8GB
Patriot Memory (PDP Systems) PSD432G32002S 32GB
Patriot Memory (PDP Systems) PSD432G32002S 32GB
内存RAM
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology CT51264BA1339.C16F 4GB
Micron Technology 36ASF2G72PZ-2G3B1 16GB
Micron Technology 36ASF2G72PZ-2G3B1 16GB
内存RAM
Samsung M393B1G70BH0-YK0 8GB
Samsung M393B1G70BH0-YK0 8GB
Crucial Technology CT8G4DFD8213.C16FADP 8GB
Crucial Technology CT8G4DFD8213.C16FADP 8GB
内存RAM
Kingston KF552C40-16 16GB
Kingston KF552C40-16 16GB
G Skill Intl F4-4400C17-8GVK 8GB
G Skill Intl F4-4400C17-8GVK 8GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
Mushkin 99[2/7/4]198F 8GB
Mushkin 99[2/7/4]198F 8GB
内存RAM
Crucial Technology CT25664AA800.M16FG 2GB
Crucial Technology CT25664AA800.M16FG 2GB
G Skill Intl F4-4000C18-8GTZR 8GB
G Skill Intl F4-4000C18-8GTZR 8GB
内存RAM
Crucial Technology CT51264AC800.C16FC 4GB
Crucial Technology CT51264AC800.C16FC 4GB
Wilk Elektronik S.A. IRP4000D4V64L18S/8G 8GB
Wilk Elektronik S.A. IRP4000D4V64L18S/8G 8GB
内存RAM
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Mushkin 99[2/7/4]209F 8GB
Mushkin 99[2/7/4]209F 8GB
内存RAM
Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
G Skill Intl F4-3200C16-4GRK 4GB
G Skill Intl F4-3200C16-4GRK 4GB
内存RAM