Samsung M378A1G43DB0-CPB 8GB vs G Skill Intl F4-2133C15-8GVR 8GB

总分

Samsung M378A1G43DB0-CPB 8GB

Samsung M378A1G43DB0-CPB 8GB

总分

G Skill Intl F4-2133C15-8GVR 8GB

G Skill Intl F4-2133C15-8GVR 8GB

差异规格评论

差异

Samsung M378A1G43DB0-CPB 8GB

需要考虑的原因
Samsung M378A1G43DB0-CPB 8GB

报告一个错误

G Skill Intl F4-2133C15-8GVR 8GB

需要考虑的原因
G Skill Intl F4-2133C15-8GVR 8GB

报告一个错误

低于PassMark测试中的延时，ns

35 36

左右 -3% 更低的延时
更快的读取速度，GB/s

15.7 15

测试中的平均数值
更快的写入速度，GB/s

11.5 10.3

测试中的平均数值

规格

完整的技术规格清单

Samsung M378A1G43DB0-CPB 8GB

G Skill Intl F4-2133C15-8GVR 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

36 35
读取速度，GB/s

15.0 15.7
写入速度，GB/s

10.3 11.5
内存带宽，mbps

17000 17000

Other

描述

PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

14-14-14, 15-15-15, 16-16-16 / 2133 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2569 2845

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Crucial Technology CT51264BA1339.C16F 4GB

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Apacer Technology 76.D105G.D090B 16GB

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Mushkin 99[2/7/4]199F 8GB

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Kingston KHX2133C11D3/4GX 4GB

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Crucial Technology CT8G4DFRA266.C8FP 8GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Corsair CMN32GX4M2Z3600C18 16GB

Corsair CMN32GX4M2Z3600C18 16GB

Kingston 99U5584-001.A00LF 4GB

Kingston 99U5584-001.A00LF 4GB

Crucial Technology CT8G4DFD8213.C16FBD1 8GB

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Kingston 9905700-053.A00G 8GB

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