Samsung M378A1G43DB0-CPB 8GB vs Gold Key Technology Co Ltd NMSO416E82-3200E 16GB

总分

Samsung M378A1G43DB0-CPB 8GB

Samsung M378A1G43DB0-CPB 8GB

总分

Gold Key Technology Co Ltd NMSO416E82-3200E 16GB

Gold Key Technology Co Ltd NMSO416E82-3200E 16GB

差异规格评论

差异

Samsung M378A1G43DB0-CPB 8GB

需要考虑的原因
Samsung M378A1G43DB0-CPB 8GB

报告一个错误

低于PassMark测试中的延时，ns

36 48

左右 25% 更低的延时

Gold Key Technology Co Ltd NMSO416E82-3200E 16GB

需要考虑的原因
Gold Key Technology Co Ltd NMSO416E82-3200E 16GB

报告一个错误

更快的读取速度，GB/s

16.8 15

测试中的平均数值
更快的写入速度，GB/s

15.7 10.3

测试中的平均数值
更高的内存带宽，mbps

25600 17000

左右 1.51 更高的带宽

规格

完整的技术规格清单

Samsung M378A1G43DB0-CPB 8GB

Gold Key Technology Co Ltd NMSO416E82-3200E 16GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

36 48
读取速度，GB/s

15.0 16.8
写入速度，GB/s

10.3 15.7
内存带宽，mbps

17000 25600

Other

描述

PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16 PC4-25600, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18 19 20 21 22
时序/时钟速度

14-14-14, 15-15-15, 16-16-16 / 2133 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2569 3047

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F4-4000C19-16GTRS 16GB

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Crucial Technology CT4G4SFS8213.C8FADP 4GB

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Corsair CMK32GX4M4K4266C19 8GB

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Crucial Technology CT51264AC800.C16FC 4GB

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Samsung M378A1G43DB0-CPB 8GB

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Micron Technology 4ATF51264AZ-3G2J1 4GB

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G Skill Intl F3-2400C11-8GSR 8GB

G Skill Intl F3-2400C11-8GSR 8GB

SK Hynix HMA851S6DJR6N-XN 4GB

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