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Samsung M378A1G43DB0-CPB 8GB
SanMax Technologies Inc. SMD4-U16G48MB-24R 16GB
比较
Samsung M378A1G43DB0-CPB 8GB vs SanMax Technologies Inc. SMD4-U16G48MB-24R 16GB
总分
Samsung M378A1G43DB0-CPB 8GB
总分
SanMax Technologies Inc. SMD4-U16G48MB-24R 16GB
差异
规格
评论
差异
需要考虑的原因
Samsung M378A1G43DB0-CPB 8GB
报告一个错误
低于PassMark测试中的延时,ns
36
42
左右 14% 更低的延时
需要考虑的原因
SanMax Technologies Inc. SMD4-U16G48MB-24R 16GB
报告一个错误
更快的读取速度,GB/s
15.7
15
测试中的平均数值
更快的写入速度,GB/s
11.9
10.3
测试中的平均数值
更高的内存带宽,mbps
19200
17000
左右 1.13 更高的带宽
规格
完整的技术规格清单
Samsung M378A1G43DB0-CPB 8GB
SanMax Technologies Inc. SMD4-U16G48MB-24R 16GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
36
42
读取速度,GB/s
15.0
15.7
写入速度,GB/s
10.3
11.9
内存带宽,mbps
17000
19200
Other
描述
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2569
2737
Samsung M378A1G43DB0-CPB 8GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
SanMax Technologies Inc. SMD4-U16G48MB-24R 16GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung 1600 CL10 Series 8GB
Micron Technology 16ATF2G64HZ-2G6E1 16GB
Kingston 9965525-140.A00LF 8GB
Crucial Technology CT8G4DFS6266.M4FB 8GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Mushkin MRX4U300GJJM16G 16GB
Patriot Memory (PDP Systems) PSD38G16002 8GB
Crucial Technology CT16G4DFD824A.M16FB 16GB
Samsung M378A5244CB0-CTD 4GB
Crucial Technology BLS4G4D240FSA.8FARG 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-3200C14-8GTZKO 8GB
Crucial Technology CT51264BD160B.C16F 4GB
Samsung M386A4G40DM0-CPB 32GB
Kingston KVR16N11/8-SP 8GB
G Skill Intl F4-2666C18-16GRS 16GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Corsair CMK16GX4M2Z2666C16 8GB
Kingston 9965516-112.A00LF 16GB
Micron Technology 16ATF1G64HZ-2G1A2 8GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
Crucial Technology CT8G4SFS824A.C8FJ 8GB
Samsung M471B1G73DB0-YK0 8GB
Crucial Technology BLM8G40C18U4BL.M8FE1 8GB
G Skill Intl F3-2666C12-8GTXD 8GB
Crucial Technology BLS8G4D26BFSC.16FBD2 8GB
Samsung M3 78T5663RZ3-CE6 2GB
Crucial Technology CT8G4SFD824A.C16FBD1 8GB
报告一个错误
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Bug description
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