Samsung M378A1G43DB0-CPB 8GB vs SK Hynix HMA451R7MFR8N-TFTD 4GB

总分

Samsung M378A1G43DB0-CPB 8GB

Samsung M378A1G43DB0-CPB 8GB

总分

SK Hynix HMA451R7MFR8N-TFTD 4GB

SK Hynix HMA451R7MFR8N-TFTD 4GB

差异规格评论

差异

Samsung M378A1G43DB0-CPB 8GB

需要考虑的原因
Samsung M378A1G43DB0-CPB 8GB

报告一个错误

低于PassMark测试中的延时，ns

36 40

左右 10% 更低的延时
更快的读取速度，GB/s

15 9.3

测试中的平均数值
更快的写入速度，GB/s

10.3 7.3

测试中的平均数值

SK Hynix HMA451R7MFR8N-TFTD 4GB

需要考虑的原因
SK Hynix HMA451R7MFR8N-TFTD 4GB

报告一个错误

规格

完整的技术规格清单

Samsung M378A1G43DB0-CPB 8GB

SK Hynix HMA451R7MFR8N-TFTD 4GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

36 40
读取速度，GB/s

15.0 9.3
写入速度，GB/s

10.3 7.3
内存带宽，mbps

17000 17000

Other

描述

PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

14-14-14, 15-15-15, 16-16-16 / 2133 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2569 1773

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Micron Technology 36ASF4G72PZ-2G3A1 32GB

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Samsung M378A1G43DB0-CPB 8GB

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SK Hynix HMA451R7MFR8N-TFTD 4GB

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Ramaxel Technology RMSA3260MH78H8H-2666 8GB

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Samsung M471A2K43BB1-CRC 16GB

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Hexon Technology Pte Ltd HEXON 1GB

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Apacer Technology 78.CAGPW.40C0B 8GB

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Samsung M391B5673EH1-CH9 2GB

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Apacer Technology 78.D2GG7.AU30B 16GB

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Ramaxel Technology RMR5030ME68F9F1600 4GB

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Nanya Technology NT8GA64D88CX3S-JR 8GB

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Samsung DDR3 8GB 1600MHz 8GB

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Samsung M471B5273DH0-CH9 4GB

Crucial Technology BL16G32C16U4W.M16FE1 16GB

Crucial Technology BL16G32C16U4W.M16FE1 16GB

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OM Nanotech Pvt.Ltd V1D4L816GB2G82G83200 16GB

OM Nanotech Pvt.Ltd V1D4L816GB2G82G83200 16GB

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Crucial Technology CT8G4SFS824A.C8FE 8GB

Crucial Technology CT8G4SFS824A.C8FE 8GB