Samsung M378A1G43DB0-CPB 8GB vs SpecTek Incorporated 16G2666CL19 16GB

总分

Samsung M378A1G43DB0-CPB 8GB

Samsung M378A1G43DB0-CPB 8GB

总分

SpecTek Incorporated 16G2666CL19 16GB

SpecTek Incorporated 16G2666CL19 16GB

差异规格评论

差异

Samsung M378A1G43DB0-CPB 8GB

需要考虑的原因
Samsung M378A1G43DB0-CPB 8GB

报告一个错误

SpecTek Incorporated 16G2666CL19 16GB

需要考虑的原因
SpecTek Incorporated 16G2666CL19 16GB

报告一个错误

低于PassMark测试中的延时，ns

22 36

左右 -64% 更低的延时
更快的读取速度，GB/s

16.8 15

测试中的平均数值
更快的写入速度，GB/s

14.8 10.3

测试中的平均数值
更高的内存带宽，mbps

21300 17000

左右 1.25 更高的带宽

规格

完整的技术规格清单

Samsung M378A1G43DB0-CPB 8GB

SpecTek Incorporated 16G2666CL19 16GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

36 22
读取速度，GB/s

15.0 16.8
写入速度，GB/s

10.3 14.8
内存带宽，mbps

17000 21300

Other

描述

PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

14-14-14, 15-15-15, 16-16-16 / 2133 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2569 3296

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Unifosa Corporation HU564404EP0200 4GB

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Samsung M3 78T2863EHS-CF7 1GB

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Wilk Elektronik S.A. GR1333D364L9/4G 4GB

Wilk Elektronik S.A. GR1333D364L9/4G 4GB

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SK Hynix HMT151R7TFR4C-H9 4GB

SK Hynix HMT151R7TFR4C-H9 4GB

SK Hynix HMA851U6CJR6N-UH 4GB

SK Hynix HMA851U6CJR6N-UH 4GB

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