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Samsung M378A1G43DB0-CPB 8GB
Teclast TLD416G26A30 16GB

Samsung M378A1G43DB0-CPB 8GB vs Teclast TLD416G26A30 16GB

总分
star star star star star
Samsung M378A1G43DB0-CPB 8GB

Samsung M378A1G43DB0-CPB 8GB

总分
star star star star star
Teclast TLD416G26A30 16GB

Teclast TLD416G26A30 16GB

差异 规格 评论

差异

Samsung M378A1G43DB0-CPB 8GB 需要考虑的原因
Samsung M378A1G43DB0-CPB 8GB
报告一个错误
Teclast TLD416G26A30 16GB 需要考虑的原因
Teclast TLD416G26A30 16GB
报告一个错误
  • 更快的读取速度，GB/s
    15.9 left arrow 15
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.1 left arrow 10.3
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 17000
    左右 1.25 更高的带宽

规格

完整的技术规格清单
Samsung M378A1G43DB0-CPB 8GB
Teclast TLD416G26A30 16GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    36 left arrow 36
  • 读取速度，GB/s
    15.0 left arrow 15.9
  • 写入速度，GB/s
    10.3 left arrow 13.1
  • 内存带宽，mbps
    17000 left arrow 21300
Other
  • 描述
    PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
  • 时序/时钟速度
    14-14-14, 15-15-15, 16-16-16 / 2133 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2569 left arrow 2719

Samsung M378A1G43DB0-CPB 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB

Teclast TLD416G26A30 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
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内存RAM
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Mushkin MR[A/B]4U346GJJM8G 8GB
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内存RAM
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内存RAM
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内存RAM
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