Samsung M378A1G44AB0-CWE 8GB vs HT Micron HTH5AN8G8NCJR-VKD 8GB

总分

Samsung M378A1G44AB0-CWE 8GB

Samsung M378A1G44AB0-CWE 8GB

总分

HT Micron HTH5AN8G8NCJR-VKD 8GB

HT Micron HTH5AN8G8NCJR-VKD 8GB

差异规格评论

差异

Samsung M378A1G44AB0-CWE 8GB

需要考虑的原因
Samsung M378A1G44AB0-CWE 8GB

报告一个错误

更快的读取速度，GB/s

16.5 15.7

测试中的平均数值
更快的写入速度，GB/s

10.9 9.5

测试中的平均数值
更高的内存带宽，mbps

25600 21300

左右 1.2% 更高的带宽

HT Micron HTH5AN8G8NCJR-VKD 8GB

需要考虑的原因
HT Micron HTH5AN8G8NCJR-VKD 8GB

报告一个错误

低于PassMark测试中的延时，ns

31 38

左右 -23% 更低的延时

规格

完整的技术规格清单

Samsung M378A1G44AB0-CWE 8GB

HT Micron HTH5AN8G8NCJR-VKD 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

38 31
读取速度，GB/s

16.5 15.7
写入速度，GB/s

10.9 9.5
内存带宽，mbps

25600 21300

Other

描述

PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

20-20-20, 22-22-22, 24-24-24 / 3200 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2829 2713

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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