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Samsung M378A1K43CB2-CTD 8GB
SK Hynix HMA851U6CJR6N-VK 4GB

Samsung M378A1K43CB2-CTD 8GB vs SK Hynix HMA851U6CJR6N-VK 4GB

总分
star star star star star
Samsung M378A1K43CB2-CTD 8GB

Samsung M378A1K43CB2-CTD 8GB

总分
star star star star star
SK Hynix HMA851U6CJR6N-VK 4GB

SK Hynix HMA851U6CJR6N-VK 4GB

差异 规格 评论

差异

Samsung M378A1K43CB2-CTD 8GB 需要考虑的原因
Samsung M378A1K43CB2-CTD 8GB
报告一个错误
SK Hynix HMA851U6CJR6N-VK 4GB 需要考虑的原因
SK Hynix HMA851U6CJR6N-VK 4GB
报告一个错误
  • 更快的读取速度，GB/s
    16.8 left arrow 15.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.1 left arrow 12.0
    测试中的平均数值

规格

完整的技术规格清单
Samsung M378A1K43CB2-CTD 8GB
SK Hynix HMA851U6CJR6N-VK 4GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    32 left arrow 32
  • 读取速度，GB/s
    15.9 left arrow 16.8
  • 写入速度，GB/s
    12.0 left arrow 12.1
  • 内存带宽，mbps
    21300 left arrow 21300
Other
  • 描述
    PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2952 left arrow 2641

Samsung M378A1K43CB2-CTD 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M378A5143EB1-CPB 4GB

SK Hynix HMA851U6CJR6N-VK 4GB RAM的比较

G Skill Intl F4-3600C19-8GSXWB 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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