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Samsung M378A1K43EB2-CWE 8GB
A-DATA Technology AO1P24HC8T1-BPGS 8GB

Samsung M378A1K43EB2-CWE 8GB vs A-DATA Technology AO1P24HC8T1-BPGS 8GB

总分
star star star star star
Samsung M378A1K43EB2-CWE 8GB

Samsung M378A1K43EB2-CWE 8GB

总分
star star star star star
A-DATA Technology AO1P24HC8T1-BPGS 8GB

A-DATA Technology AO1P24HC8T1-BPGS 8GB

差异 规格 评论

差异

Samsung M378A1K43EB2-CWE 8GB 需要考虑的原因
Samsung M378A1K43EB2-CWE 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    33 left arrow 74
    左右 55% 更低的延时
  • 更快的读取速度，GB/s
    17.6 left arrow 12.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.0 left arrow 5.9
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 19200
    左右 1.33% 更高的带宽
A-DATA Technology AO1P24HC8T1-BPGS 8GB 需要考虑的原因
A-DATA Technology AO1P24HC8T1-BPGS 8GB
报告一个错误

规格

完整的技术规格清单
Samsung M378A1K43EB2-CWE 8GB
A-DATA Technology AO1P24HC8T1-BPGS 8GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    33 left arrow 74
  • 读取速度，GB/s
    17.6 left arrow 12.9
  • 写入速度，GB/s
    12.0 left arrow 5.9
  • 内存带宽，mbps
    25600 left arrow 19200
Other
  • 描述
    PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    20-20-20, 22-22-22, 24-24-24 / 3200 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2910 left arrow 1344

Samsung M378A1K43EB2-CWE 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMSX32GX4M2A3200C22 16GB

A-DATA Technology AO1P24HC8T1-BPGS 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Crucial Technology BLS8G4D26BFSC.16FE 8GB
Crucial Technology BLS8G4D26BFSC.16FE 8GB
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G Skill Intl F4-4133C19-8GTZC 8GB
内存RAM
Kingston 9965669-018.A00G 16GB
Kingston 9965669-018.A00G 16GB
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Samsung M378A2K43BB1-CRC 16GB
内存RAM
Samsung M378A1K43EB2-CWE 8GB
Samsung M378A1K43EB2-CWE 8GB
A-DATA Technology AO1P24HC8T1-BPGS 8GB
A-DATA Technology AO1P24HC8T1-BPGS 8GB
内存RAM
SK Hynix HMT351S6CFR8C-PB 4GB
SK Hynix HMT351S6CFR8C-PB 4GB
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Gold Key Technology Co Ltd NMUD416E82-3000D 16GB
内存RAM
SK Hynix HYMP125U64CP8-S6 2GB
SK Hynix HYMP125U64CP8-S6 2GB
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Crucial Technology CT4G4SFS624A.C4FB 4GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
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G Skill Intl F4-2400C15-8GRB 8GB
内存RAM
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Crucial Technology BLT2G3D1608DT1TX0 2GB
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G Skill Intl F4-4400C19-8GTZSW 8GB
内存RAM
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Corsair CMX4GX3M2A1600C9 2GB
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Kingston 9965604-033.D00G 16GB
内存RAM
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Samsung M393B2G70BH0-CK0 16GB
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Essencore Limited IM48GU88N26-GIIHA 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-4400C18-8GTZRC 8GB
G Skill Intl F4-4400C18-8GTZRC 8GB
内存RAM
Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
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Avant Technology J641GU42J9266ND 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
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Kingmax Semiconductor GLLF62F-DA---------- 4GB
内存RAM
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AMD R5316G1609U2K 8GB
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Golden Empire CL18-20-20 D4-3000 8GB
内存RAM
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Smart Modular SG564568FG8N6KF-Z2 2GB
Kingston KH2400C15D4/8 8GB
Kingston KH2400C15D4/8 8GB
内存RAM