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Samsung M378A1K43EB2-CWE 8GB
A-DATA Technology AO1P24HC8T1-BQXS 8GB

Samsung M378A1K43EB2-CWE 8GB vs A-DATA Technology AO1P24HC8T1-BQXS 8GB

总分
star star star star star
Samsung M378A1K43EB2-CWE 8GB

Samsung M378A1K43EB2-CWE 8GB

总分
star star star star star
A-DATA Technology AO1P24HC8T1-BQXS 8GB

A-DATA Technology AO1P24HC8T1-BQXS 8GB

差异 规格 评论

差异

Samsung M378A1K43EB2-CWE 8GB 需要考虑的原因
Samsung M378A1K43EB2-CWE 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    33 left arrow 40
    左右 18% 更低的延时
  • 更快的读取速度，GB/s
    17.6 left arrow 13.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.0 left arrow 8.9
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 19200
    左右 1.33% 更高的带宽
A-DATA Technology AO1P24HC8T1-BQXS 8GB 需要考虑的原因
A-DATA Technology AO1P24HC8T1-BQXS 8GB
报告一个错误

规格

完整的技术规格清单
Samsung M378A1K43EB2-CWE 8GB
A-DATA Technology AO1P24HC8T1-BQXS 8GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    33 left arrow 40
  • 读取速度，GB/s
    17.6 left arrow 13.3
  • 写入速度，GB/s
    12.0 left arrow 8.9
  • 内存带宽，mbps
    25600 left arrow 19200
Other
  • 描述
    PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    20-20-20, 22-22-22, 24-24-24 / 3200 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2910 left arrow 2204

Samsung M378A1K43EB2-CWE 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMSX32GX4M2A3200C22 16GB

A-DATA Technology AO1P24HC8T1-BQXS 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
TwinMOS 8DHE3MN8-HATP 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M378A1K43EB2-CWE 8GB
Samsung M378A1K43EB2-CWE 8GB
A-DATA Technology AO1P24HC8T1-BQXS 8GB
A-DATA Technology AO1P24HC8T1-BQXS 8GB
内存RAM
Corsair CMZ16GX3M2A2400C10 8GB
Corsair CMZ16GX3M2A2400C10 8GB
G Skill Intl F4-3300C16-8GTZ 8GB
G Skill Intl F4-3300C16-8GTZ 8GB
内存RAM
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
G Skill Intl F4-4000C18-8GTZSW 8GB
G Skill Intl F4-4000C18-8GTZSW 8GB
内存RAM
Kingston 9905403-447.A00LF 4GB
Kingston 9905403-447.A00LF 4GB
Gold Key Technology Co Ltd NMSO416E82-3200E 16GB
Gold Key Technology Co Ltd NMSO416E82-3200E 16GB
内存RAM
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F4-4400C16-8GTZR 8GB
G Skill Intl F4-4400C16-8GTZR 8GB
内存RAM
Nanya Technology M2F4GH64CB8HB6N-CG 4GB
Nanya Technology M2F4GH64CB8HB6N-CG 4GB
Samsung M471A4G43MB1-CTD 32GB
Samsung M471A4G43MB1-CTD 32GB
内存RAM
Kingston KVT8FP-HYC 4GB
Kingston KVT8FP-HYC 4GB
G Skill Intl F4-4000C18-8GTRG 8GB
G Skill Intl F4-4000C18-8GTRG 8GB
内存RAM
G Skill Intl F5-6400J3239G16G 16GB
G Skill Intl F5-6400J3239G16G 16GB
Wilk Elektronik S.A. GR2666S464L19/16G 16GB
Wilk Elektronik S.A. GR2666S464L19/16G 16GB
内存RAM
Kingston 99U5428-063.A00LF 8GB
Kingston 99U5428-063.A00LF 8GB
Kingston 9905599-010.A00G 4GB
Kingston 9905599-010.A00G 4GB
内存RAM
SK Hynix HMT351U6CFR8C-H9 4GB
SK Hynix HMT351U6CFR8C-H9 4GB
Samsung M471A2K43CBCBCRC 16GB
Samsung M471A2K43CBCBCRC 16GB
内存RAM
Corsair CML8GX3M2A1600C9 4GB
Corsair CML8GX3M2A1600C9 4GB
Kingston KKN2NM-MIE 4GB
Kingston KKN2NM-MIE 4GB
内存RAM
Kingston 99U5403-036.A00G 4GB
Kingston 99U5403-036.A00G 4GB
Samsung M393A1G40EB1-CRC 8GB
Samsung M393A1G40EB1-CRC 8GB
内存RAM
Kingston 9905471-002.A00LF 2GB
Kingston 9905471-002.A00LF 2GB
Apacer Technology 76.B305G.D500B 4GB
Apacer Technology 76.B305G.D500B 4GB
内存RAM
Samsung M3 78T2863QZS-CF7 1GB
Samsung M3 78T2863QZS-CF7 1GB
Kingston 9905599-029.A00G 4GB
Kingston 9905599-029.A00G 4GB
内存RAM