Samsung M378A1K43EB2-CWE 8GB vs Crucial Technology BL8G32C16U4B.M8FE 8GB

总分

Samsung M378A1K43EB2-CWE 8GB

Samsung M378A1K43EB2-CWE 8GB

总分

Crucial Technology BL8G32C16U4B.M8FE 8GB

Crucial Technology BL8G32C16U4B.M8FE 8GB

差异规格评论

差异

Samsung M378A1K43EB2-CWE 8GB

需要考虑的原因
Samsung M378A1K43EB2-CWE 8GB

报告一个错误

更高的内存带宽，mbps

25600 21300

左右 1.2% 更高的带宽

Crucial Technology BL8G32C16U4B.M8FE 8GB

需要考虑的原因
Crucial Technology BL8G32C16U4B.M8FE 8GB

报告一个错误

低于PassMark测试中的延时，ns

28 33

左右 -18% 更低的延时
更快的读取速度，GB/s

17.9 17.6

测试中的平均数值
更快的写入速度，GB/s

14.9 12.0

测试中的平均数值

规格

完整的技术规格清单

Samsung M378A1K43EB2-CWE 8GB

Crucial Technology BL8G32C16U4B.M8FE 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

33 28
读取速度，GB/s

17.6 17.9
写入速度，GB/s

12.0 14.9
内存带宽，mbps

25600 21300

Other

描述

PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度

20-20-20, 22-22-22, 24-24-24 / 3200 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2910 3460

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Corsair CMY16GX3M4A2133C8 4GB

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G Skill Intl F4-3200C16-32GTZN 32GB

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Corsair CM2X1024-8500C5D 1GB

Micron Technology 4ATF51264HZ-3G2J1 4GB

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Kingston 9905471-001.A01LF 2GB

Kingston 9905471-001.A01LF 2GB

G Skill Intl F4-2933C14-16GTZRX 16GB

G Skill Intl F4-2933C14-16GTZRX 16GB

Elpida EBJ21UE8BDF0-DJ-F 2GB

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Hua Nan San Xian Technology Co Ltd HNMI8GD4240D0 8GB