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Samsung M378A1K43EB2-CWE 8GB
Gold Key Technology Co Ltd GKE800SO102408-2666A 8GB

Samsung M378A1K43EB2-CWE 8GB vs Gold Key Technology Co Ltd GKE800SO102408-2666A 8GB

总分
star star star star star
Samsung M378A1K43EB2-CWE 8GB

Samsung M378A1K43EB2-CWE 8GB

总分
star star star star star
Gold Key Technology Co Ltd GKE800SO102408-2666A 8GB

Gold Key Technology Co Ltd GKE800SO102408-2666A 8GB

差异 规格 评论

差异

Samsung M378A1K43EB2-CWE 8GB 需要考虑的原因
Samsung M378A1K43EB2-CWE 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    33 left arrow 34
    左右 3% 更低的延时
  • 更快的读取速度，GB/s
    17.6 left arrow 16.9
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 21300
    左右 1.2% 更高的带宽
Gold Key Technology Co Ltd GKE800SO102408-2666A 8GB 需要考虑的原因
Gold Key Technology Co Ltd GKE800SO102408-2666A 8GB
报告一个错误
  • 更快的写入速度，GB/s
    13.2 left arrow 12.0
    测试中的平均数值

规格

完整的技术规格清单
Samsung M378A1K43EB2-CWE 8GB
Gold Key Technology Co Ltd GKE800SO102408-2666A 8GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    33 left arrow 34
  • 读取速度，GB/s
    17.6 left arrow 16.9
  • 写入速度，GB/s
    12.0 left arrow 13.2
  • 内存带宽，mbps
    25600 left arrow 21300
Other
  • 描述
    PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    20-20-20, 22-22-22, 24-24-24 / 3200 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2910 left arrow 3029

Samsung M378A1K43EB2-CWE 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMSX32GX4M2A3200C22 16GB

Gold Key Technology Co Ltd GKE800SO102408-2666A 8GB RAM的比较

Corsair CM5S16GM4800A40K2 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Samsung M378A1K43EB2-CWE 8GB
Samsung M378A1K43EB2-CWE 8GB
Gold Key Technology Co Ltd GKE800SO102408-2666A 8GB
Gold Key Technology Co Ltd GKE800SO102408-2666A 8GB
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Kingston KHX1600C9S3L/8G 8GB
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G Skill Intl F4-3600C19-16GSXW 16GB
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SK Hynix HYMP164U64CP6-Y5 512MB
SK Hynix HYMP164U64CP6-Y5 512MB
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Essencore Limited KD4AGS88C-26N1900 16GB
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PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
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Kingston MSI24D4U7S8MB-8 8GB
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Smart Modular SG564568FG8N6KF-Z2 2GB
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Kingston 99U5665-001.A00G 4GB
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SK Hynix HYMP112U64CP8-S5 1GB
SK Hynix HYMP112U64CP8-S5 1GB
G Skill Intl F4-3600C19-16GSXK 16GB
G Skill Intl F4-3600C19-16GSXK 16GB
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Kingston ACR256X64D3S1333C9 2GB
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SK Hynix HYMP112U64CP8-S6 1GB
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Samsung M471A5244CB0-CRC 4GB
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Kingston 99U5474-010.A00LF 2GB
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内存RAM
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Ramaxel Technology RMT3020EC58E9F1333 4GB
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Crucial Technology CT16G4DFD824A.M16FJ 16GB
内存RAM
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Crucial Technology BL8G30C15U4WL.M8FE1 8GB
内存RAM
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Crucial Technology CT102464BF160B-16F 8GB
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Patriot Memory (PDP Systems) 4133 C19 Series 8GB
内存RAM
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Kingston 9905403-038.A00LF 4GB
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SK Hynix HMA451R7MFR8N-TF 4GB
内存RAM
Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
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Corsair CMK64GX4M8B3200C16 8GB
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