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Samsung M3 93T5750CZA-CE6 2GB
Corsair CMK64GX4M8B3200C16 8GB

Samsung M3 93T5750CZA-CE6 2GB vs Corsair CMK64GX4M8B3200C16 8GB

总分
star star star star star
Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

总分
star star star star star
Corsair CMK64GX4M8B3200C16 8GB

Corsair CMK64GX4M8B3200C16 8GB

差异 规格 评论

差异

Samsung M3 93T5750CZA-CE6 2GB 需要考虑的原因
Samsung M3 93T5750CZA-CE6 2GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 15
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,622.0 left arrow 13.4
    测试中的平均数值
Corsair CMK64GX4M8B3200C16 8GB 需要考虑的原因
Corsair CMK64GX4M8B3200C16 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 77
    左右 -196% 更低的延时
  • 更高的内存带宽，mbps
    17000 left arrow 5300
    左右 3.21 更高的带宽

规格

完整的技术规格清单
Samsung M3 93T5750CZA-CE6 2GB
Corsair CMK64GX4M8B3200C16 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    77 left arrow 26
  • 读取速度，GB/s
    3,405.2 left arrow 15.0
  • 写入速度，GB/s
    2,622.0 left arrow 13.4
  • 内存带宽，mbps
    5300 left arrow 17000
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    763 left arrow 3112

Samsung M3 93T5750CZA-CE6 2GB RAM的比较

takeMS International AG TMS2GB264D082805EQ 2GB
Southland Microsystems 40002105-01 2GB

Corsair CMK64GX4M8B3200C16 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston 9905403-061.A00LF 2GB
Kingston 9905403-061.A00LF 2GB
Kingston K1CXP8-MIE 16GB
Kingston K1CXP8-MIE 16GB
内存RAM
Kingston 9965433-034.A00LF 4GB
Kingston 9965433-034.A00LF 4GB
G Skill Intl F4-3600C16-8GTZKW 8GB
G Skill Intl F4-3600C16-8GTZKW 8GB
内存RAM
Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
Corsair CMK64GX4M8B3200C16 8GB
Corsair CMK64GX4M8B3200C16 8GB
内存RAM
Kingston 99U5429-007.A00LF 2GB
Kingston 99U5429-007.A00LF 2GB
Micron Technology 18ASF1G72PDZ-2G3A2 8GB
Micron Technology 18ASF1G72PDZ-2G3A2 8GB
内存RAM
A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
Essencore Limited IM48GU88A30-FGGHMZ 8GB
Essencore Limited IM48GU88A30-FGGHMZ 8GB
内存RAM
Kingston 99U5469-045.A00LF 4GB
Kingston 99U5469-045.A00LF 4GB
Kingston KHX2133C14S4/8G 8GB
Kingston KHX2133C14S4/8G 8GB
内存RAM
Patriot Memory (PDP Systems) PSD48G320081 8GB
Patriot Memory (PDP Systems) PSD48G320081 8GB
Ramaxel Technology RMSA3310MJ86H9F-3200 4GB
Ramaxel Technology RMSA3310MJ86H9F-3200 4GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Kingston 9965745-002.A00G 16GB
Kingston 9965745-002.A00G 16GB
内存RAM
Kingston 99U5584-004.A00LF 4GB
Kingston 99U5584-004.A00LF 4GB
Kingston 9905744-024.A00G 16GB
Kingston 9905744-024.A00G 16GB
内存RAM
Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
Micron Technology 72ASS8G72LZ-2G6D2 64GB
Micron Technology 72ASS8G72LZ-2G6D2 64GB
内存RAM
Kingston 99U5584-005.A00LF 4GB
Kingston 99U5584-005.A00LF 4GB
Hoodisk Electronics Co Ltd GKE800SO51216-2400 8GB
Hoodisk Electronics Co Ltd GKE800SO51216-2400 8GB
内存RAM
Qimonda 72T128420EFA3SB2 1GB
Qimonda 72T128420EFA3SB2 1GB
Crucial Technology CB8GS2400.C8D 8GB
Crucial Technology CB8GS2400.C8D 8GB
内存RAM
Samsung M393B5270CH0-CH9 4GB
Samsung M393B5270CH0-CH9 4GB
Crucial Technology CT32G4DFD832A.M16FB 32GB
Crucial Technology CT32G4DFD832A.M16FB 32GB
内存RAM
SK Hynix HYMP31GF72CMP4D5Y5 8GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
Crucial Technology BLS8G4D240FSB.16FADG 8GB
Crucial Technology BLS8G4D240FSB.16FADG 8GB
内存RAM