Samsung M391B5673EH1-CH9 2GB vs Micron Technology 72ASS8G72LZ-2G6D2 64GB

总分

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

总分

Micron Technology 72ASS8G72LZ-2G6D2 64GB

Micron Technology 72ASS8G72LZ-2G6D2 64GB

差异规格评论

差异

Samsung M391B5673EH1-CH9 2GB

需要考虑的原因
Samsung M391B5673EH1-CH9 2GB

报告一个错误

低于PassMark测试中的延时，ns

26 38

左右 32% 更低的延时
更快的读取速度，GB/s

12.8 8.7

测试中的平均数值
更快的写入速度，GB/s

9.0 7.0

测试中的平均数值

Micron Technology 72ASS8G72LZ-2G6D2 64GB

需要考虑的原因
Micron Technology 72ASS8G72LZ-2G6D2 64GB

报告一个错误

更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Samsung M391B5673EH1-CH9 2GB

Micron Technology 72ASS8G72LZ-2G6D2 64GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 38
读取速度，GB/s

12.8 8.7
写入速度，GB/s

9.0 7.0
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2143 1999

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

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Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology BL16G36C16U4BL.M16FE 16GB

Kingston 99U5584-001.A00LF 4GB

Kingston 99U5584-001.A00LF 4GB

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Corsair CMSX64GX4M4A2400C16 16GB

Kingston 9905403-090.A01LF 4GB

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Kingston KHX2400C15D4/4G 4GB

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Nanya Technology NT4GC72B4NA1NL-CG 4GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Corsair CMK32GX4M4A2400C16 8GB

Corsair CMK32GX4M4A2400C16 8GB