Samsung M378A1K43EB2-CWE 8GB vs Kingston 9905678-006.A00G 4GB

总分

Samsung M378A1K43EB2-CWE 8GB

Samsung M378A1K43EB2-CWE 8GB

总分

Kingston 9905678-006.A00G 4GB

Kingston 9905678-006.A00G 4GB

差异规格评论

差异

Samsung M378A1K43EB2-CWE 8GB

需要考虑的原因
Samsung M378A1K43EB2-CWE 8GB

报告一个错误

更快的读取速度，GB/s

17.6 14.8

测试中的平均数值
更快的写入速度，GB/s

12.0 10.9

测试中的平均数值
更高的内存带宽，mbps

25600 19200

左右 1.33% 更高的带宽

Kingston 9905678-006.A00G 4GB

需要考虑的原因
Kingston 9905678-006.A00G 4GB

报告一个错误

低于PassMark测试中的延时，ns

26 33

左右 -27% 更低的延时

规格

完整的技术规格清单

Samsung M378A1K43EB2-CWE 8GB

Kingston 9905678-006.A00G 4GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

33 26
读取速度，GB/s

17.6 14.8
写入速度，GB/s

12.0 10.9
内存带宽，mbps

25600 19200

Other

描述

PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

20-20-20, 22-22-22, 24-24-24 / 3200 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2910 2412

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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SK Hynix HMA82GU6CJR8N-XN 16GB

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Hexon Technology Pte Ltd HEXON 1GB

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Corsair CMD128GX4M8B2800C14 16GB

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A-DATA Technology VDQVE1B16 2GB

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Micron Technology 16ATF2G64AZ-2G6B1 16GB

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Samsung M378A1K43EB2-CWE 8GB

Samsung M378A1K43EB2-CWE 8GB

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Gold Key Technology Co Ltd NMSO416F82-3200E 16GB

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Kingston 9965640-004.C00G 16GB

Kingston 9965525-140.A00LF 8GB

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Corsair CMSO32GX4M2A2133C15 16GB

Corsair CMSO32GX4M2A2133C15 16GB

Micron Technology 8JSF25664HZ-1G4D1 2GB

Micron Technology 8JSF25664HZ-1G4D1 2GB

Micron Technology 18ASF1G72PDZ-2G3A2 8GB

Micron Technology 18ASF1G72PDZ-2G3A2 8GB

Kingston 9965525-018.A00LF 4GB

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Samsung M471A1G43DB0-CPB 8GB

Samsung M471A1G43DB0-CPB 8GB