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Samsung M378A1K43EB2-CWE 8GB
Kingston K821PJ-MID 16GB

Samsung M378A1K43EB2-CWE 8GB vs Kingston K821PJ-MID 16GB

总分
star star star star star
Samsung M378A1K43EB2-CWE 8GB

Samsung M378A1K43EB2-CWE 8GB

总分
star star star star star
Kingston K821PJ-MID 16GB

Kingston K821PJ-MID 16GB

差异 规格 评论

差异

Samsung M378A1K43EB2-CWE 8GB 需要考虑的原因
Samsung M378A1K43EB2-CWE 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    33 left arrow 41
    左右 20% 更低的延时
  • 更快的读取速度，GB/s
    17.6 left arrow 12.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.0 left arrow 10.3
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 19200
    左右 1.33% 更高的带宽
Kingston K821PJ-MID 16GB 需要考虑的原因
Kingston K821PJ-MID 16GB
报告一个错误

规格

完整的技术规格清单
Samsung M378A1K43EB2-CWE 8GB
Kingston K821PJ-MID 16GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    33 left arrow 41
  • 读取速度，GB/s
    17.6 left arrow 12.7
  • 写入速度，GB/s
    12.0 left arrow 10.3
  • 内存带宽，mbps
    25600 left arrow 19200
Other
  • 描述
    PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    20-20-20, 22-22-22, 24-24-24 / 3200 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2910 left arrow 2338

Samsung M378A1K43EB2-CWE 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMSX32GX4M2A3200C22 16GB

Kingston K821PJ-MID 16GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston K531R8-MIN 4GB
Kingston K531R8-MIN 4GB
G Skill Intl F4-2666C15-4GVK 4GB
G Skill Intl F4-2666C15-4GVK 4GB
内存RAM
Samsung M378A1K43EB2-CWE 8GB
Samsung M378A1K43EB2-CWE 8GB
Kingston K821PJ-MID 16GB
Kingston K821PJ-MID 16GB
内存RAM
Kingston 99U5458-008.A00LF 4GB
Kingston 99U5458-008.A00LF 4GB
Corsair CMD32GX4M4B3333C16 8GB
Corsair CMD32GX4M4B3333C16 8GB
内存RAM
Kingston 99U5584-005.A00LF 4GB
Kingston 99U5584-005.A00LF 4GB
G Skill Intl F4-3000C15-8GRKB 8GB
G Skill Intl F4-3000C15-8GRKB 8GB
内存RAM
Kingston KHX2133C11D3/4GX 4GB
Kingston KHX2133C11D3/4GX 4GB
G Skill Intl F4-3000C15-8GRR 8GB
G Skill Intl F4-3000C15-8GRR 8GB
内存RAM
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
G Skill Intl F4-2800C18-8GRS 8GB
G Skill Intl F4-2800C18-8GRS 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Kingston 9905711-015.A00G 4GB
Kingston 9905711-015.A00G 4GB
内存RAM
Kingston 99U5595-005.A00LF 2GB
Kingston 99U5595-005.A00LF 2GB
Micron Technology CT4G4DFS8213.8FA11 4GB
Micron Technology CT4G4DFS8213.8FA11 4GB
内存RAM
Kingston 99U5584-007.A00LF 4GB
Kingston 99U5584-007.A00LF 4GB
EVGA 8GX-D4-3000-MR 8GB
EVGA 8GX-D4-3000-MR 8GB
内存RAM
Kingston KHX318C10FR/8G 8GB
Kingston KHX318C10FR/8G 8GB
Corsair CMSX16GX4M2A3200C22 8GB
Corsair CMSX16GX4M2A3200C22 8GB
内存RAM
SK Hynix HYMP112S64CP6-S6 1GB
SK Hynix HYMP112S64CP6-S6 1GB
Corsair CMK32GX4M4B3866C18 8GB
Corsair CMK32GX4M4B3866C18 8GB
内存RAM
Kingston 9905469-143.A00LF 4GB
Kingston 9905469-143.A00LF 4GB
Crucial Technology CT16G4DFD8213.M16FB 16GB
Crucial Technology CT16G4DFD8213.M16FB 16GB
内存RAM
Kingston 99U5474-022.A00LF 2GB
Kingston 99U5474-022.A00LF 2GB
Crucial Technology BLS16G4D26BFSE.16FBD 16GB
Crucial Technology BLS16G4D26BFSE.16FBD 16GB
内存RAM
Kingston 9965525-144.A00LF 8GB
Kingston 9965525-144.A00LF 8GB
Corsair CMK16GX4M2A2400C16 8GB
Corsair CMK16GX4M2A2400C16 8GB
内存RAM