Samsung M378A1K43EB2-CWE 8GB vs Micron Technology 16ATF1G64AZ-2G1A1 8GB

总分

Samsung M378A1K43EB2-CWE 8GB

Samsung M378A1K43EB2-CWE 8GB

总分

Micron Technology 16ATF1G64AZ-2G1A1 8GB

Micron Technology 16ATF1G64AZ-2G1A1 8GB

差异规格评论

差异

Samsung M378A1K43EB2-CWE 8GB

需要考虑的原因
Samsung M378A1K43EB2-CWE 8GB

报告一个错误

低于PassMark测试中的延时，ns

33 42

左右 21% 更低的延时
更快的读取速度，GB/s

17.6 12.7

测试中的平均数值
更快的写入速度，GB/s

12.0 10.2

测试中的平均数值
更高的内存带宽，mbps

25600 17000

左右 1.51% 更高的带宽

Micron Technology 16ATF1G64AZ-2G1A1 8GB

需要考虑的原因
Micron Technology 16ATF1G64AZ-2G1A1 8GB

报告一个错误

规格

完整的技术规格清单

Samsung M378A1K43EB2-CWE 8GB

Micron Technology 16ATF1G64AZ-2G1A1 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

33 42
读取速度，GB/s

17.6 12.7
写入速度，GB/s

12.0 10.2
内存带宽，mbps

25600 17000

Other

描述

PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

20-20-20, 22-22-22, 24-24-24 / 3200 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2910 2701

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Essencore Limited IM48GU48N24-FFFHM 8GB

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Samsung M378A1K43EB2-CWE 8GB

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Micron Technology 16ATF1G64AZ-2G1A1 8GB

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Crucial Technology BLS4G4D240FSE.8FBD 4GB

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Avant Technology W642GU42J5213N8 16GB

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Corsair CMK32GX4M4A2400C12 8GB

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Samsung M391B5673EH1-CH9 2GB

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Hyundai Inc AR32C16S8K2SU416R 8GB

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Samsung M3 78T2953EZ3-CF7 1GB

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Samsung M378B5773DH0-CH9 2GB

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

G Skill Intl F4-3000C14-8GTZR 8GB

G Skill Intl F4-3000C14-8GTZR 8GB

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Crucial Technology BL16G32C16U4B.M8FB1 16GB

Crucial Technology BL16G32C16U4B.M8FB1 16GB

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A-DATA Technology AO2P32NCSV1-BEVS 16GB

A-DATA Technology AO2P32NCSV1-BEVS 16GB