Samsung M378A1K43EB2-CWE 8GB vs Mushkin MRB4U300GJJM16G 16GB

总分

Samsung M378A1K43EB2-CWE 8GB

Samsung M378A1K43EB2-CWE 8GB

总分

Mushkin MRB4U300GJJM16G 16GB

Mushkin MRB4U300GJJM16G 16GB

差异规格评论

差异

Samsung M378A1K43EB2-CWE 8GB

需要考虑的原因
Samsung M378A1K43EB2-CWE 8GB

报告一个错误

更快的读取速度，GB/s

17.6 15.8

测试中的平均数值
更高的内存带宽，mbps

25600 17000

左右 1.51% 更高的带宽

Mushkin MRB4U300GJJM16G 16GB

需要考虑的原因
Mushkin MRB4U300GJJM16G 16GB

报告一个错误

低于PassMark测试中的延时，ns

24 33

左右 -38% 更低的延时
更快的写入速度，GB/s

12.1 12.0

测试中的平均数值

规格

完整的技术规格清单

Samsung M378A1K43EB2-CWE 8GB

Mushkin MRB4U300GJJM16G 16GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

33 24
读取速度，GB/s

17.6 15.8
写入速度，GB/s

12.0 12.1
内存带宽，mbps

25600 17000

Other

描述

PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

20-20-20, 22-22-22, 24-24-24 / 3200 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2910 2761

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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TwinMOS 8DHE3MN8-HATP 2GB

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Lenovo LMKUFG68AHFHD-32A 16GB

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Kingston 8ATF1G64AZ-2G3A1 8GB

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Kingston KHX1600C9D3/8G 8GB

Micron Technology 16ATF2G64AZ-2G6B1 16GB

Micron Technology 16ATF2G64AZ-2G6B1 16GB

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A-DATA Technology AM2P24HC8T1-BUSS 8GB

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INTENSO M418039 8GB

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