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Samsung M378A1K43EB2-CWE 8GB
Samsung M471A2K43BB1-CTD 16GB

Samsung M378A1K43EB2-CWE 8GB vs Samsung M471A2K43BB1-CTD 16GB

总分
star star star star star
Samsung M378A1K43EB2-CWE 8GB

Samsung M378A1K43EB2-CWE 8GB

总分
star star star star star
Samsung M471A2K43BB1-CTD 16GB

Samsung M471A2K43BB1-CTD 16GB

差异 规格 评论

差异

Samsung M378A1K43EB2-CWE 8GB 需要考虑的原因
Samsung M378A1K43EB2-CWE 8GB
报告一个错误
  • 更快的读取速度，GB/s
    17.6 left arrow 17
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 21300
    左右 1.2% 更高的带宽
Samsung M471A2K43BB1-CTD 16GB 需要考虑的原因
Samsung M471A2K43BB1-CTD 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    23 left arrow 33
    左右 -43% 更低的延时
  • 更快的写入速度，GB/s
    14.7 left arrow 12.0
    测试中的平均数值

规格

完整的技术规格清单
Samsung M378A1K43EB2-CWE 8GB
Samsung M471A2K43BB1-CTD 16GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    33 left arrow 23
  • 读取速度，GB/s
    17.6 left arrow 17.0
  • 写入速度，GB/s
    12.0 left arrow 14.7
  • 内存带宽，mbps
    25600 left arrow 21300
Other
  • 描述
    PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    20-20-20, 22-22-22, 24-24-24 / 3200 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2910 left arrow 3156

Samsung M378A1K43EB2-CWE 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMSX32GX4M2A3200C22 16GB

Samsung M471A2K43BB1-CTD 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
Samsung M471B1G73QH0-YK0 8GB
Samsung M471B1G73QH0-YK0 8GB
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Samsung M471B1G73QH0-YK0 8GB
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Cortus SAS 8ATF1G64AZ-2G6E1 8GB
Cortus SAS 8ATF1G64AZ-2G6E1 8GB
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Corsair CMD16GX3M2A1866C9 8GB
Corsair CMD16GX3M2A1866C9 8GB
G Skill Intl F4-4000C15-8GTRS 8GB
G Skill Intl F4-4000C15-8GTRS 8GB
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Mushkin 991988 (996988) 4GB
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A-DATA Technology AO2P32NCST2-BZ7SHD 16GB
A-DATA Technology AO2P32NCST2-BZ7SHD 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Shenzhen Micro Innovation Industry PSD41626D19P1 16GB
Shenzhen Micro Innovation Industry PSD41626D19P1 16GB
内存RAM
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology CT51264BA1339.C16F 4GB
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Kingston 9965525-018.A00LF 4GB
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EXCELERAM D4168G8HHSS9CJRB21 16GB
内存RAM
SK Hynix HMA451U6AFR8N-TF 4GB
SK Hynix HMA451U6AFR8N-TF 4GB
Crucial Technology CT8G4DFD824A.C16FF 8GB
Crucial Technology CT8G4DFD824A.C16FF 8GB
内存RAM
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N-VK 8GB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N
内存RAM
Crucial Technology CT102464BA160B.M16 8GB
Crucial Technology CT102464BA160B.M16 8GB
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Wilk Elektronik S.A. GR2666S464L19/16G 16GB
内存RAM
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Smart Modular SG564568FG8N6KF-Z2 2GB
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A-DATA Technology DDR4 3200 8GB
内存RAM
Elpida EBJ40EG8BFWB-JS-F 4GB
Elpida EBJ40EG8BFWB-JS-F 4GB
Kingston 9965640-035.C00G 32GB
Kingston 9965640-035.C00G 32GB
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